Metal–Organic Chemical Vapor Deposition of 2D Semiconducting Bi <sub>2</sub> O <sub>2</sub> S for High‐Performance Field‐Effect Transistor
Abstract
Abstract Bi 2 O 2 S has emerged as a promising 2D semiconductor for high‐performance field‐effect transistor (FET) applications, effectively addressing limitations observed in conventional 2D materials, including environmental instability, challenges with achieving optimal bandgaps, and insufficient static power efficiency. However, practical application of Bi 2 O 2 S has been hindered by synthesis challenges; previous methods often relied on high‐temperature processes (>700 °C) for precursor sublimation resulting in the formation of undesired phases or solution‐based approaches that compromise material quality. In this work, the growth of single‐crystalline Bi 2 O 2 S nanoplates at a low temperature of ≈400 °C is demonstrated using metal–organic chemical vapor deposition (MOCVD), achieving a bandgap of 1.2 eV compatible with Si‐based devices. Fabricated Bi 2 O 2 S‐based FETs through this process exhibit excellent electrical performance, with a maximum on/off ratio of 3.6 × 10⁹ and a field‐effect mobility of 227 cm 2 V −1 s −1 , benefiting from the low effective mass (0.15 m 0 ) inherent to Bi 2 O 2 S. Furthermore, Bi 2 O 2 S photodetectors display remarkable optoelectronic characteristics, including a high responsivity of 11,577 A W −1 , rapid response time in the millisecond range, and a specific detectivity of 10 14 Jones. These results confirm Bi 2 O 2 S's potential as a versatile semiconductor for next‐generation electronics, offering both BEOL‐compatible low‐temperature synthesis and high‐speed, low‐power device capabilities.
Article Details
Authors (24)
Hyun‐Jun Chai
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Minsoo Kang
Ayoung Ham
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Han Beom Jeong
Cheolmin Park
Yong‐Sung Kim
Korea Research Institute of Standards & Science (KRISS) Daejeon 34113 Republic of Korea
Eunpyo Park
Center for Semiconductor Technology Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea
Gichang Noh
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Min‐kyung Jo
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Woonggi Hong
Department of Foundry Engineering, Dankook University 1 , 152 Jukjeon-ro, Suji-gu, Yongin-si, Gyeonggi-do 16890,
Mingu Kang
Tae Soo Kim
Suhyun Kim
Jeongwon Park
Jaehyun Lee
Min‐gyu Kim
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Seongdae Kwon
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Hyeonbin Park
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Joon Young Kwak
Division of Electronic and Semiconductor Engineering Ewha Womans University Seoul 03760 Republic of Korea
Seungwoo Song
Operando Methodology and Measurement Team Korea Research Institute of Standards & Science (KRISS) Daejeon 34113 Republic of Korea
Sung‐Yool Choi
School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea
Hu Young Jeong
Seunghwan Seo
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
Kibum Kang
Graduate School of Semiconductor Technology Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea