Molecular Engineering of Electron Transport Layers via Steric Hindrance and Chelation Toward Stable Inverted Perovskite Solar Cells

T Tao Shen J Jiarong Wang (Department of Materials Science and Engineering) C Chengjian Yuan (Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong China) L Leyu Bi (Department of Chemistry) X Xiaofeng Huang F Francis R. Lin Q Qiang Fu A Alex K.‐Y. Jen (Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR)

Abstract

ABSTRACT Fullerene derivatives, such as C 60 and PCBM, are widely used as electron transport layers (ETLs) in inverted perovskite solar cells (PSCs) due to their high electron mobility and well‐aligned energy levels. However, their poor photo‐thermal stability and weak interactions with perovskite limit further progress. To address these challenges, we develop a novel fullerene derivative, 2Py, as the ETL for inverted PSCs via a synergistic strategy combining steric hindrance modulation and chelation group incorporation. This molecule delivers three key benefits: moderate steric hindrance inhibits ETL aggregation during thermal aging; chelation groups enhance interfacial interactions with the perovskite layer; and improved hydrophilicity promotes uniform SnO x film growth via atomic layer deposition (ALD). 2Py ETL enables an efficiency of 26.07% for inverted PSCs based on a 1.55‐eV bandgap. Wide‐bandgap (1.80 eV) and narrow‐bandgap (1.25 eV) PSCs achieve efficiencies of 19.94% and 24.06%, respectively. Notably, these devices demonstrate exceptional photo‐thermal stability, achieving T 99 >1080 h under 85°C heating and T 99 >1250 h under maximum power point tracking at 45°C, outperforming PCBM‐based devices. This molecular design strategy paves new pathways for enhancing ETL performance and stability in inverted PSCs.

Article Details

Volume / Issue Vol. 38, Issue 12
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

T

Tao Shen

J

Jiarong Wang

Department of Materials Science and Engineering

C

Chengjian Yuan

Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong China

L

Leyu Bi

Department of Chemistry

X

Xiaofeng Huang

F

Francis R. Lin

Q

Qiang Fu

A

Alex K.‐Y. Jen

Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR