Molecular Surface Self‐Accumulation Toward High‐Efficiency and Mechanically Robust Flexible Perovskite Solar Cells

R Ruilin Han (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) P Peimin Weng (Key Laboratory for Advanced Optoelectronic Integrated Chips of Jiangsu Province Peking University Yangtze Delta Institute of Optoelectronics Nantong China) Y Yiming Huangfu (Key Laboratory for Advanced Optoelectronic Integrated Chips of Jiangsu Province Peking University Yangtze Delta Institute of Optoelectronics Nantong China) S Shuxin Dong (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China) X Xinyue Zhang C Chuanzhen Shang (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) C Chenyun Wang (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) B Bin Zhou D Duo Qu (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) Z Zhanfei Zhang (State Key Laboratory of Space Power Sources Shanghai Institute of Space Power‐Sources Shanghai China) L Lijie Sun W Wenying Zhao (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) S Shasha Wang S Siyu Wei (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China) Y Yuyao Bi (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China) M Mingquan Pan (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China) J Jiang Wu R Rui Zhu Y Yongguang Tu (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China)

Abstract

ABSTRACT Flexible perovskite solar cells (F‐PSCs) have promising applications in building portable energy systems. However, the efficiency and stability of F‐PSCs still lag far behind their rigid counterparts. The efficiency gap stems mainly from the high roughness of flexible substrates, which aggravates the spatial heterogeneity within transporting interfaces and thus reduces the carrier transport efficiency. Moreover, dynamic stress induces cracks and interfacial delamination in F‐PSCs, resulting in significant mechanical stability issues. Here, we adopt a molecular surface self‐accumulation strategy to improve the spatial homogeneity of the self‐assembled monolayers (SAMs) by adding halogenated phenothiazine‐based molecules (Br‐4PAPT) into the perovskite precursor solution. The Br‐4PAPT diffuses to the bottom interface of the perovskite film to fill vacancies in the underlying SAMs during perovskite crystallization. This enhanced homogeneity translates to p‐i‐n structured ultra‐thin (9 µm) F‐PSCs achieving a record efficiency of 22.02% on an active area of 1 cm 2 and 24.47% on 0.1 cm 2 . Furthermore, the ultra‐thin large‐area F‐PSCs achieved a power‐per‐weight of 12.71 W/g. The strategy also reduces the Young's modulus at the bottom interface of the perovskite film. Coupled with mechanical neutral plane design, the ultra‐thin small‐area F‐PSCs maintained 91.81% efficiency after 10 000 bending cycles at a bending radius of 2 mm.

Article Details

Volume / Issue Vol. 38, Issue 22
Published April 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (19)

R

Ruilin Han

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

P

Peimin Weng

Key Laboratory for Advanced Optoelectronic Integrated Chips of Jiangsu Province Peking University Yangtze Delta Institute of Optoelectronics Nantong China

Y

Yiming Huangfu

Key Laboratory for Advanced Optoelectronic Integrated Chips of Jiangsu Province Peking University Yangtze Delta Institute of Optoelectronics Nantong China

S

Shuxin Dong

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China

X

Xinyue Zhang

C

Chuanzhen Shang

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

C

Chenyun Wang

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

B

Bin Zhou

D

Duo Qu

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

Z

Zhanfei Zhang

State Key Laboratory of Space Power Sources Shanghai Institute of Space Power‐Sources Shanghai China

L

Lijie Sun

W

Wenying Zhao

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

S

Shasha Wang

S

Siyu Wei

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China

Y

Yuyao Bi

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China

M

Mingquan Pan

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an China

J

Jiang Wu

R

Rui Zhu

Y

Yongguang Tu

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China