Multidimensional Additive Manufacturing for Perovskite Optoelectronic Devices
Abstract
Abstract Halide perovskite optoelectronics have experienced transformative progress in thin‐film device performance over the past decade. With expanding application scenarios, tailored dimensionality control for perovskite structures is essential, from 0D nanocrystals and 1D nanowires for lasers to 2D films for displays/solar cells and 3D heterojunction arrays for broadband photodetectors. However, conventional methods such as spin coating and lithographic methods face inherent incompatibility in perovskite fabrication with multiple dimensions. Additive manufacturing (AM) offers a versatile and cost‐effective platform to address this challenge by leveraging low‐temperature and spatially controlled crystallization processes. This review summarizes recent progress in AM techniques for multidimensional (from 0D to 4D architectures) perovskite optoelectronics, categorizing them into nozzle‐based deposition (e.g., inkjet printing, direct ink writing), light‐assisted processing (e.g., laser direct writing, photopolymerization), and mechanical transfer printing. Critical analysis focuses on printing resolution, dimensional scalability, and ink formulation strategies for increased printability and crystallinity. The interplay between ink rheology/energy‐field parameters and device performance is elucidated to guide optimal AM method selection for the fabrication of unconventional architectures. The integration of AM methods enables the development of next‐generation optoelectronics with multidimensional structures beyond traditional fabrication methods.
Article Details
Authors (12)
Kai Zhuang
School of Public Health, Guangdong Medical University
Hao Jiang
Nuermuhanmode Naerkezha
Smart Manufacturing Thrust Systems Hub The Hong Kong University of Science and Technology (Guangzhou) Guangzhou 511458 P. R. China
Mei Zhou
Zeji Sun
Smart Manufacturing Thrust Systems Hub The Hong Kong University of Science and Technology (Guangzhou) Guangzhou 511458 P. R. China
Wenrui Zhang
Saisai Li
Longhui Zeng
Key Laboratory of Material Physics of Ministry of Education, and School of Physics Zhengzhou University Zhengzhou P. R. China
Zhiwen Zhou
Laboratory for Neuroethology, Graduate School of Science, Nagoya University
Xin Tang
Mingjian Yuan
Mojun Chen