Multifunctional Interfacial Molecular Bridging Strategy Enables Efficient and Stable Inverted Perovskite Solar Cells

X Xinyue Li Z Zhaowei Xu R Rongmei Zhao (Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China) S Shifeng Ge (Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China) T Tingfeng Liu B Bing Cai M Mingliang Li W Wen‐Hua Zhang (Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China)

Abstract

Abstract Interface engineering in inverted perovskite solar cells (PSCs) faces critical challenges arising from nonideal interfacial contact, defect accumulation, impeded carrier transport, and energy‐level misalignment between the perovskite and electron transport layer, for example, phenyl‐C61‐butyric acid methyl ester (PCBM). These interfacial deficiencies collectively induce nonradiative recombination and degrade device stability. Herein, a multifunctional interfacial molecular bridging strategy using (benzhydrylthio)acetic acid (DSA) addresses the upper interfacial issues of inverted PSCs, achieving three synergistic roles. 1) Interfacial stabilization . A stable molecular‐bridging layer is constructed with DSA at the perovskite/PCBM interface through carboxylate–Pb 2 ⁺ coordination bonds, along with π–π stacking interactions between DSA and PCBM. 2) Defect passivation . Multiple active sites in DSA molecules, such as thioether and carboxylic acid groups, can synchronously achieve chemical passivation with undercoordinated Pb 2+ sites. 3) Energy band alignment : DSA induces n‐type band bending through electron donation by the thioether, reducing the work function and enhancing the electron‐extraction kinetics. As a result, DSA‐treated devices achieve a champion power conversion efficiency of 26.08% along with an open‐circuit voltage loss of only 53 mV. Finally, the DSA‐treated devices demonstrate remarkable operational stability, retaining 96% of the initial efficiency after being tracked at the maximum power point for 2000 h.

Article Details

Volume / Issue Vol. 37, Issue 34
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

X

Xinyue Li

Z

Zhaowei Xu

R

Rongmei Zhao

Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China

S

Shifeng Ge

Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China

T

Tingfeng Liu

B

Bing Cai

M

Mingliang Li

W

Wen‐Hua Zhang

Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China