Multi‐State Probabilistic Computing Using Floating‐Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems

S Sunwoo Cheong S Soo Hyung Lee J Janguk Han J Jun‐Young Park (College of Engineering, Department of Materials Science and Engineering and Inter‐university Semiconductor Research Center Seoul National University Seoul Republic of Korea) D Dong Hoon Shin Y Yoon Ho Jang S Sung Keun Shim S Sungho Kim C Cheol Seong Hwang J Joon‐Kyu Han (Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul Republic of Korea)

Abstract

ABSTRACT Probabilistic computing has gained attention for solving combinatorial optimization problems (COPs), mainly using the Ising model, which may not be suitable for complex COPs. Instead, this work proposes a multi‐state probabilistic computing system based on the Potts model using stochastic threshold switching floating‐body metal‐oxide‐semiconductor field‐effect transistors (FB‐MOSFETs) as the multi‐state probabilistic bits (p‐bits) to solve challenging COPs. The system employs drain voltage sharing and a one‐hot sampling method to achieve controllable probabilistic behavior and scalable annealing. Experimental validations on spin glass and max‐4‐cut problems demonstrate that the system efficiently samples a tunable Boltzmann distribution while converging faster than traditional methods. Comparative analyses further highlight superior energy efficiency and decreased time‐to‐solution, underscoring the potential of multi‐state probabilistic computing for large‐scale, complex COPs using only MOSFET devices.

Article Details

Volume / Issue Vol. 38, Issue 16
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

S

Sunwoo Cheong

S

Soo Hyung Lee

J

Janguk Han

J

Jun‐Young Park

College of Engineering, Department of Materials Science and Engineering and Inter‐university Semiconductor Research Center Seoul National University Seoul Republic of Korea

D

Dong Hoon Shin

Y

Yoon Ho Jang

S

Sung Keun Shim

S

Sungho Kim

C

Cheol Seong Hwang

J

Joon‐Kyu Han

Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul Republic of Korea