Organic Radical Accelerates Charge Carrier Funneling in Quasi‐2D Perovskite LEDs

H Hongkang Xu (Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China) T Tianle Fan (State Key Laboratory of Chemical Reaction Dynamics Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian China) Z Zihao Zhu (MOE Key Laboratory of Macromolecule Synthesis and Functionalization of Ministry of Education, Department of Polymer Science and Engineering) A Alim Abdurahman (State Key Laboratory of Integrated Optoelectronics JLU Region College of Electronic Science and Engineering Jilin University Changchun 130012 P.R. China) B Boning Wu (State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics) W Wenming Tian (State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhong Shan Road, Dalian 116023, P. R. China) J Jonghee Yang (Department of Chemistry Yonsei University Seoul Republic of Korea) W Wenzhe Li M Meiqin Xiao (Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China) S Simin Gong (Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China) P Ping Chen

Abstract

ABSTRACT Quasi‐2D metal halide perovskites (MHP) have emerged as promising candidates for light‐emitting diodes (PeLEDs) due to their intrinsic advantages in color purity, bandgap tunability, and stability. The prime working principle realizing high radiative emission in quasi‐2D MHP is the ultrafast, consecutive charge transfer (CT) process toward the low‐bandgap crystallites across multiple quantum wells, called charge carrier funneling. Ironically, such a key process is intrinsically limited in the quasi‐2D MHP by the molecular spacers, which have electronically insulating natures. To challenge this limit, herein, we explore the impact of a judiciously designed, stable, and conductive organic radical, (5H‐pyrido[3,2‐b]indole‐2,6‐dichlorophenyl)bis(2,4,6‐trichlorophenyl)methyl as a molecular additive in the MHP matrix. It is found that the spatially delocalized singly occupied molecular orbital offers an electronic bridge accelerating interfacial CT and the carrier funneling by surface adsorption, thus maximizing radiation recombination yield. As a result, the radical‐incorporating PeLEDs (peaking at ≈ 684 nm) achieve a remarkable external quantum efficiency of 26.8% with an operational half‐lifetime of ≈ 340 min, ranking among the best deep‐red devices reported to date. This work demonstrates that rational radical molecular design offers a powerful route to resolve intrinsic CT limitations in quasi‐2D MHP, unlocking both high efficiency and long‐term stability in next‐generation PeLEDs.

Article Details

Volume / Issue Vol. 38, Issue 15
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

H

Hongkang Xu

Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China

T

Tianle Fan

State Key Laboratory of Chemical Reaction Dynamics Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian China

Z

Zihao Zhu

MOE Key Laboratory of Macromolecule Synthesis and Functionalization of Ministry of Education, Department of Polymer Science and Engineering

A

Alim Abdurahman

State Key Laboratory of Integrated Optoelectronics JLU Region College of Electronic Science and Engineering Jilin University Changchun 130012 P.R. China

B

Boning Wu

State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics

W

Wenming Tian

State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhong Shan Road, Dalian 116023, P. R. China

J

Jonghee Yang

Department of Chemistry Yonsei University Seoul Republic of Korea

W

Wenzhe Li

M

Meiqin Xiao

Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China

S

Simin Gong

Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics School of Physical Science and Technology Southwest University Chongqing China

P

Ping Chen