Overall Performance Improvement of Perovskite Green LEDs by CsPbBr <sub>3</sub> &amp;Cs <sub>4</sub> PbBr <sub>6</sub> Nanocrystals and Molecular Doping

Z Zhengchang Xia J Ji Jiang A Aoxing Wang D Di An Z Zhouxin Li H Huaiwen Zheng (State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing China) Z Zhigang Yin G Gufeng He (Department of Electronic Engineering Shanghai Jiao Tong University Shanghai 200240 China) J Jingbi You X Xingwang Zhang (Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering)

Abstract

Abstract Metal halide perovskites hold great promise for display technologies owing to their excellent optoelectronic properties. Recent advances in perovskite light‐emitting diodes (PeLEDs) have improved their efficiency, brightness, and operational stability, but simultaneously boosting these metrics remains challenging. Additionally, other critical metrics such as power consumption, color purity, and gamut have received little attention. Here, a co‐additive approach is proposed to regulate the perovskite crystallization, enabling the synthesis of CsPbBr 3 &amp;Cs 4 PbBr 6 dual‐phase nanocrystals (NCs) and the formation of nanoscale concave‐convex morphology, as well as to change its semiconductor polarity by molecular doping. Due to the reduced defect density, balanced charge injection, and improved light extraction efficiency, the PeLEDs achieve a remarkable external quantum efficiency (EQE) of 28.2%, a high brightness of over 150000 cd m −2 and a T 50 lifetime of 4291 h, along with an ultra‐narrow spectral linewidth (16.5 nm), an ultra‐low driving voltage (1.9 V), and a superior Rec. 2020 color gamut coverage (CGC) of 92%.

Article Details

Volume / Issue Vol. 37, Issue 34
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

Z

Zhengchang Xia

J

Ji Jiang

A

Aoxing Wang

D

Di An

Z

Zhouxin Li

H

Huaiwen Zheng

State Key Laboratory of Semiconductor Physics and Chip Technologies Institute of Semiconductors Chinese Academy of Sciences Beijing China

Z

Zhigang Yin

G

Gufeng He

Department of Electronic Engineering Shanghai Jiao Tong University Shanghai 200240 China

J

Jingbi You

X

Xingwang Zhang

Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering