Over‐Strain‐Relaxation State and Dislocation‐Governed Polar Topologies in Ferroelectric Superlattices

X Xiao‐Dong Lv (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) M Mei‐Xiong Zhu (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) R Ru‐Jian Jiang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) C Changji Li (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) Y Yu‐Jia Wang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) Y Yin‐Lian Zhu (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China) X Xiu‐Liang Ma (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China) Y Yun‐Long Tang (Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China)

Abstract

ABSTRACT Polar topologies in ferroelectric films can be stably constructed by tensile strains through coherent growth. How potential polar textures in ferroelectric films grown under compressive strain substrate will evolve is still elusive. Here, we have grown high‐quality PbTiO 3 /SrTiO 3 superlattices on NdGaO 3 substrates, where the nominal mismatch of this system is about −1.0% and thus the superlattices may be subjected to compressive strain. Dislocation arrays between the substrate and the films were identified. Amazingly, these misfit dislocations were found to release the mismatch far exceeding the −1.0% nominal mismatch, approaching −1.7% and forming actually a final tensile strain state of about 0.7%. This strain state was driven by the competition between thermal mismatch dynamics and ferroelectric phase transition of PbTiO 3 , which triggers the formation of polar vortex arrays. In particular, the polar topology here has the tendency of transition from vortex to periodic dipole waves under the influence of threading dislocations. Our research provides possibilities of integrating and regulating ferroelectric topologies on nominal compressive strain substrates. The novel over‐strain‐relaxation behavior was unrealized previously, and will stimulate more strain manipulations for oxide epitaxial films. More efforts could be focused on some practical substrates, such as direct growth of polar topologies on silicon.

Article Details

Volume / Issue Vol. 38, Issue 41
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

X

Xiao‐Dong Lv

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

M

Mei‐Xiong Zhu

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

R

Ru‐Jian Jiang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

C

Changji Li

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

Y

Yu‐Jia Wang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

Y

Yin‐Lian Zhu

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China

X

Xiu‐Liang Ma

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China

Y

Yun‐Long Tang

Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China