Phonon Driven Ferroelectricity and Raman Active Modes in Hybrid Organic‐Inorganic Perovskites

C Chuanzhao Li (Department of Applied Physics The Hong Kong Polytechnic University Hung Hom, Kowloon Hong Kong China) S Shurong Yuan (Department of Applied Physics The Hong Kong Polytechnic University Hung Hom, Kowloon Hong Kong China) Y Yixin Li (Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry) Z Zhenyue Wu (State Key Laboratory of Functional Crystals and Devices) Y Yuanyuan Jin K Kian Ping Loh (Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore) K Kai Leng (Department of Applied Physics)

Abstract

AbstractHybrid organic‐inorganic perovskites (HOIPs) have emerged as promising ferroelectric semiconductors, yet the phonon signatures governing their ferroelectricity remain poorly understood. Here, by analyzing the temperature‐dependent Raman peak profiles of highly ordered ferroelectric domains in HOIPs, a framework to systematically investigate the dimensionality (n)‐dependent phonons that are critical to ferroelectric behaviour is established. By tracking phonon evolution across the ferroelectric‐to‐paraelectric phase transition in HOIPs with different n, characteristic modes associated with the ferroelectric symmetry‐breaking process are identified. Notably, in the ferroelectric phase of (BA)2(MA)2Pb3Br10 (n = 3), these modes exhibit a redshift compared to those in (BA)2(MA)Pb2Br7 (n = 2), reflecting a reduced energy barrier for ferroelectric switching. Density functional theory (DFT) calculations further correlate these modes with their spectral signatures in Raman spectroscopy, particularly highlighting zone‐boundary modes that diminish upon transitioning to the paraelectric phase. Polarized Raman mapping further reveals adjacent ferroelectric domains with orthogonal polarization orientations, directly linking phonon activity to domain configuration. This work elucidates the role of phonons in HOIP ferroelectricity, offering insights for tailoring domain‐related properties in ferroelectric devices.

Article Details

Volume / Issue Vol. 37, Issue 33
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (7)

C

Chuanzhao Li

Department of Applied Physics The Hong Kong Polytechnic University Hung Hom, Kowloon Hong Kong China

S

Shurong Yuan

Department of Applied Physics The Hong Kong Polytechnic University Hung Hom, Kowloon Hong Kong China

Y

Yixin Li

Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry

Z

Zhenyue Wu

State Key Laboratory of Functional Crystals and Devices

Y

Yuanyuan Jin

K

Kian Ping Loh

Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

K

Kai Leng

Department of Applied Physics