Proton Selective Nanoporous Atomically Thin Graphene Membranes for Vanadium Redox Flow Batteries

P Pavan Chaturvedi (Chemical and Biomolecular Engineering Department Vanderbilt University Nashville TN 37212 USA) P Peifu Cheng (Department of Chemical and Biomolecular Engineering Vanderbilt University Nashville TN 37212 USA) S Saban M. Hus (Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA) M Matthew Coupin (Walker Department of Mechanical Engineering University of Texas at Austin Austin TX 78712‐1591 USA) A An‐Ping Li (Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA) J Jamie Warner (Texas Materials Institute, The University of Texas at Austin 3 , Austin, Texas 78712,) M Michael S.H. Boutilier (Department of Chemical and Biochemical Engineering Western University London ON N6A 5B9 Canada) P Piran R. Kidambi (Mechanical and Aerospace Engineering Department University of Florida Gainesville FL 32611 USA)

Abstract

Abstract Angstrom‐scale proton‐selective pores in atomically thin 2D materials present fundamentally new opportunities for advancing proton exchange membranes (PEMs). Vanadium Redox Flow Batteries (VRFBs) for grid‐scale energy storage require PEMs with high areal proton conductance (>1 S cm −2 ) and minimal vanadium ion (VO 2+ ) crossover. However, state‐of‐the‐art Nafion 212 membranes (N212 ≈50 µm thick), suffer from persistent VO 2+ crossover reducing performance and efficiency. Here, a layered PEM is demonstrated, comprising monolayer CVD graphene with Angstrom‐scale proton‐selective pores introduced via Ar plasma, integrated with an ultra‐thin ≈300 nm polybenzimidazole (PBI) layer and sandwiched between two Nafion 211 (25 µm thick) layers. The layered architecture facilitates scalable membrane fabrication by mitigating defects while processing and facile stacking of graphene layers allows stochastic non‐selective defect isolation enabling exceptionally low VO 2+ crossover (selectivity (H + areal conductance / VO 2+ permeability) ≈6709 × 10 6 S min cm −4 ), with proton conductance >8 S cm −2 . Systematic transport experiments supported by resistance‐based transport modelling elucidate the role of defect size, defect isolation, and sealing, as well as layering/stacking, to enable orders of magnitude (>671× over N212) improvements in selectivity, along with areal proton conductance >8 S cm −2 . This work highlights the potential of atomic‐scale proton‐selective defect engineering in 2D materials, in conjunction with facile stacking and layering of materials as strategies for scalable, high‐performance advances in PEMs for energy, electrochemical, and separation applications beyond VRFBs.

Article Details

Volume / Issue Vol. 38, Issue 5
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

P

Pavan Chaturvedi

Chemical and Biomolecular Engineering Department Vanderbilt University Nashville TN 37212 USA

P

Peifu Cheng

Department of Chemical and Biomolecular Engineering Vanderbilt University Nashville TN 37212 USA

S

Saban M. Hus

Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

M

Matthew Coupin

Walker Department of Mechanical Engineering University of Texas at Austin Austin TX 78712‐1591 USA

A

An‐Ping Li

Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

J

Jamie Warner

Texas Materials Institute, The University of Texas at Austin 3 , Austin, Texas 78712,

M

Michael S.H. Boutilier

Department of Chemical and Biochemical Engineering Western University London ON N6A 5B9 Canada

P

Piran R. Kidambi

Mechanical and Aerospace Engineering Department University of Florida Gainesville FL 32611 USA