Rational Molecular Design of π‐Extended Thiazolothiazole for High‐Performance UV‐OPDs Seamlessly Integrated with CMOS

J Jaehee Park (Department of Chemistry and Biochemistry, University of California) W Won Jun Pyo J Jubin Kang (Department of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea) T Taek Min Kim (Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea) S Sangjun Lee (Department of Biomedical Engineering, University of Minnesota) J Jungmin OH S Seyeon Baek (Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea) S Seong‐Jin Kim (Department of System Semiconductor Engineering Sogang University Mapo‐gu Seoul 04107 Republic of Korea) I In Hwan Jung D Dae Sung Chung

Abstract

AbstractVacuum‐deposited organic photodiodes (OPDs) offer unique advantages—including narrowband selectivity and compatibility with standard fabrication processes—but achieving ultraviolet (UV) selectivity in such devices remains a key challenge. This is due to the need to reconcile two competing design requirements: 1) strong π–π stacking for efficient charge transport, and 2) limited π‐conjugation to retain a wide bandgap suitable for UV absorption and vacuum deposition. Here, we report a molecular design strategy for UV‐selective OPDs based on thiazolothiazole (Tz)‐based small molecules with tailored backbone planarity and conjugation length. The resulting vacuum‐deposited active layers simultaneously exhibit wide bandgaps and robust π–π interactions. The optimized devices achieve outstanding UV selectivity (full‐width at half‐maximum: 60 nm), high specific detectivity (1.06 × 1012 Jones), and fast dynamic response (cutoff frequency of 50,100 Hz)—representing the highest performance for vacuum‐deposited UV‐OPDs reported to date. Furthermore, it is demonstrated the seamless integration of these semi‐transparent OPDs with complementary metal‐oxide‐semiconductor (CMOS) image sensors (CIS), underscoring their potential for multifunctional imaging applications. The findings provide key molecular insights for advancing UV‐selective organic photodetectors.

Article Details

Volume / Issue Vol. 37, Issue 38
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

J

Jaehee Park

Department of Chemistry and Biochemistry, University of California

W

Won Jun Pyo

J

Jubin Kang

Department of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

T

Taek Min Kim

Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

S

Sangjun Lee

Department of Biomedical Engineering, University of Minnesota

J

Jungmin OH

S

Seyeon Baek

Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea

S

Seong‐Jin Kim

Department of System Semiconductor Engineering Sogang University Mapo‐gu Seoul 04107 Republic of Korea

I

In Hwan Jung

D

Dae Sung Chung