Relaxor Antiferroelectric Dynamics for Neuromorphic Computing

Abstract

Abstract Relaxor antiferroelectric (AFE) materials display a gradual polarization response and high energy storage density with polarization slowly reverting after removing an external field. This distinctive polarization‐switching behavior closely resembles synaptic plasticity in biological nervous systems, presenting substantial potential for neuromorphic computing applications. Especially, its 2D scenario exhibits unique physical properties and maintains stability at atomic thickness due to their antipolar alignment, which effectively eliminates the depolarization field effect. Such stable 2D relaxor AFE materials offer significant advantages for integrating these materials into modern electronic devices for neuromorphic computing. In this study, the potential of a novel quaternary layered AFE material, CuBiP₂Se₆ (CBPS), is explored for neuromorphic device applications. CBPS exhibits a broad range of light absorption and stable relaxor AFE behavior, rendering it an outstanding candidate for optoelectronic synaptic devices. High‐quality CBPS is synthesized and its AFE properties through various characterization techniques are verified. CBPS‐based synaptic devices demonstrate dual‐mode tunable resistance plasticity stimulated by both electrical and optical inputs, demonstrating the capacity to perform in‐sensor computing for image restoration tasks. These findings suggest that relaxor AFE materials like CBPS could provide a robust platform for various brain‐inspired applications, particularly in neuromorphic computing, and artificial visual systems.