Resistance to Overdoping Allows Over 2000 S cm <sup>−1</sup> Conductivity in P(g <sub>3</sub> BTTT) With Anion‐Exchange Doping
Abstract
ABSTRACT Chemical doping of conjugated polymers significantly enhances their conductivity, making them attractive for a large range of applications. Recently, anion‐exchange doping, where the dopant counterion is replaced by inorganic anions by exposure of a p‐doped film to an electrolyte, has been demonstrated as an effective way to overcome the limitations of molecular dopants in terms of bulkiness, stability and energetics. Here, we demonstrate anion‐exchange doping for polymers bearing oligoether side chains and report over 2000 S cm −1 electrical conductivity for the P(g 3 BTTT) polymer. We investigate several thiophene and thienothiophene‐based polymers in the high‐doping regime to understand this high conductivity. We show that transport involves delocalized charges, that all generated charges participate to the transport, and that the mobility is resilient over nanometer to micrometer length scales. However, the high‐doping regime also shows a trade‐off between high charge density and high mobility, limiting the conductivity at excess concentrations of doubly charged species. Surprisingly, P(g 3 BTTT) is resistant to this ‘overdoping’ effect and sustains particularly high levels of doubly charged species without drop in mobility. The exceptional conductivity of doped P(g 3 BTTT) can thus be related to the high doping level that is achieved thanks to the oligoether side chains, without significant trade‐off on the concomitantly high mobility.
Article Details
Authors (15)
Basil Hunger
Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern Switzerland
Maximilian M. Horn
Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern Switzerland
Eva Röck
Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern Switzerland
Diego Rosas Villalva
Materials Science and Engineering Physical Science and Engineering (PSE) Division King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia
Lize Bynens
Hasselt University, Institute for Materials Research (imo-imomec), Design & Synthesis of Organic Semiconductors (DSOS), Martelarenlaan 42, B-3500 Hasselt, Belgium
Jochen Vanderspikken
Hasselt University, Institute for Materials Research (imo-imomec), Design & Synthesis of Organic Semiconductors (DSOS), Martelarenlaan 42, B-3500 Hasselt, Belgium
Christina Kousseff
Department of Chemistry Chemistry Research Laboratory University of Oxford Oxford UK
Silène Gobeil
Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern Switzerland
Olivier Bardagot
Department of Chemistry Biochemistry and Pharmaceutical Sciences University of Bern Bern Switzerland
Nesibe Akmanşen‐Kalayci
Department of Chemistry and Biochemistry University of California Los Angeles California USA
Sarah H. Tolbert
Department of Chemistry and Biochemistry University of California Los Angeles California USA
Iain McCulloch
Chemistry Research Laboratory, University of Oxford, 12 Mansfield Road, Oxford OX1 3TA, U.K.
Wouter Maes
Hasselt University, Institute for Materials Research (imo-imomec), Design & Synthesis of Organic Semiconductors (DSOS), Martelarenlaan 42, B-3500 Hasselt, Belgium
Demetra Tsokkou
FemtoMat Research Group, Department Für Chemie Biochemie und Pharmazie, University of Bern Bern Switzerland
Natalie Banerji
FemtoMat Research Group, Department Für Chemie Biochemie und Pharmazie, University of Bern Bern Switzerland