Revisiting Ferroelectric‐Gated Phototransistors: A Tripartite Synapse‐Inspired Approach to In‐Sensor Image Processing

Y Yubin Lee (Department of Chemistry, Korea University) D Dong Hyun Seo (School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) J Jun Seo Lee (School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) J Jae Min Jeon (School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) H Hyung Rae Kim M Min Seok Kim C Chaehyeon Ahn (Department of Chemistry Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) S Sung‐Un An (School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) J Jihun Choi H Hyunseung Kim (Research Institute of Advanced Materials) C Chang Kyu Jeong (Division of Advanced Materials Engineering Jeonbuk National University Jeonju Jeonbuk 54896 Republic of Korea) H Hyunseob Lim D Dong‐Ho Kang (School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea) Y Young Min Song

Abstract

Abstract Neuromorphic devices inspired by the tripartite synapse system offer enhanced modulation of synaptic weight via a third terminal. However, using an electrically independent terminal for memorizing and processing optical information remains unexplored. Here, a ferroelectric‐gated phototransistor (FGPT) incorporating ferroelectric polymers and organic photoactive channels is revisited for neuromorphic vision systems. It is demonstrated that partial polarization switching in the ferroelectric gate insulator enables linear control of the photoactive channel. Furthermore, the photogating effect induced by charge trapping at the ferroelectric insulator/photoactive channel interface further enhances the photonic non‐volatile (PNV) characteristics of the FGPT. This allows memorized visual information, expressed as photoconductance, to be incrementally potentiated or depressed. The modulated photoconductance fully spans the current level within the dynamic range of the device (153 dB). Finally, the feasibility of the device for all‐day face recognition is shown by in‐sensor processing of visual information obtained from unstructured environments into the pre‐trained range. This approach results in up to a ≈40% improvement in recognition accuracy.

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

Y

Yubin Lee

Department of Chemistry, Korea University

D

Dong Hyun Seo

School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

J

Jun Seo Lee

School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

J

Jae Min Jeon

School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

H

Hyung Rae Kim

M

Min Seok Kim

C

Chaehyeon Ahn

Department of Chemistry Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

S

Sung‐Un An

School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

J

Jihun Choi

H

Hyunseung Kim

Research Institute of Advanced Materials

C

Chang Kyu Jeong

Division of Advanced Materials Engineering Jeonbuk National University Jeonju Jeonbuk 54896 Republic of Korea

H

Hyunseob Lim

D

Dong‐Ho Kang

School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

Y

Young Min Song