Robust Full‐Surface Bonding of Substrate and Electrode for Ultra‐Flexible Sensor Integration

M Masahito Takakuwa (Graduate School of Engineering Institute of Engineering Innovation The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan) D Daishi Inoue (RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan) L Lulu Sun (School of Chemistry) M Michitaka Yamamoto S Shinjiro UMEZU D Daisuke Hashizume (RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan) T Toshihiro Itoh K Kenjiro Fukuda (Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan) T Takao Someya (Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan) T Tomoyuki Yokota

Abstract

Abstract The integration of multiple flexible electronics is crucial for the development of ultra‐flexible wearable and implantable devices. To fabricate an integrated system, robust and flexible bonding throughout the connection area, irrespective of the electrode or substrate, is needed. Conventional methods for flexible direct bonding have primarily been confined to metal electrodes or substrate‐only bonding due to varying material properties. Consequently, the mechanical and electrical properties of the connections deteriorate based on their shape and size. This study introduces a bonding technique for wearable electronics, achieving strong, flexible connections between materials like gold and parylene at a low temperature (85 °C). This hybrid direct bonding method ensures strong bonding across both the Au electrode and parylene substrate within electronic interconnections. Additionally, a 3D‐stacked flexible structure that maintains robustness and high flexibility without an adhesive layer is successfully developed. An ultrathin photoplethysmography sensor developed by stacking an ultrathin organic photodetector atop an organic light‐emitting diode is demonstrated. Unlike traditional methods requiring adhesives or high pressure, this approach maintains flexibility essential for deformation, withstanding bending at a radius of 0.5 mm. The technique's robustness suggests promising applications in durable, ultra‐flexible electronics integration.

Article Details

Volume / Issue Vol. 37, Issue 49
Published December 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

M

Masahito Takakuwa

Graduate School of Engineering Institute of Engineering Innovation The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan

D

Daishi Inoue

RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan

L

Lulu Sun

School of Chemistry

M

Michitaka Yamamoto

S

Shinjiro UMEZU

D

Daisuke Hashizume

RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan

T

Toshihiro Itoh

K

Kenjiro Fukuda

Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

T

Takao Someya

Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

T

Tomoyuki Yokota