Robust Imaging through Light‐Scattering Barriers via Energetically Modulated Multispectral Organic Photodetectors
Abstract
Abstract Emerging technologies, such as biomedical imaging and autonomous driving, rely on low‐noise near infrared (NIR) photodetectors. Organic photodetectors (OPDs) offer tremendous potential for these applications because of their seamless integration and NIR photosensing capabilities; however, their high noise levels have constrained widespread commercialization. Herein, the study demonstrates a bulk heterojunction (BHJ) NIR OPD featuring an ultralow noise current of 2.18 fA, enabled by a newly synthesized electron‐blocking layer (EBL), ((2,7‐dicyano‐9 H ‐fluorene‐9,9‐diyl)bis(propane‐3,1‐diyl))bis(phosphonic acid) (3PAFCN). Through diverse energetic modulative design strategies, 3PAFCN enables the OPD to achieve homogenous surface properties, an elevated interfacial energy barrier, and optimized BHJ morphology, culminating in a notable specific detectivity of 2.50 × 10 14 cm Hz 0.5 W −1 at 808 nm illumination under white‐noise conditions. These EBL design principles are broadly applicable for various photoactive materials. Demonstrations in single‐pixel imaging highlight the exceptional clarity of the 3PAFCN‐based OPD in low‐light and foggy environments, underscoring the potential of OPD technology for advanced imaging applications.
Article Details
Authors (21)
Seunghyun Oh
Suyeon Jo
Ji Hyeon Lee
Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Hyun Woo Ko
Tae Hyuk Kim
Paul Hongsuck Seo
Gyeong Min Lee
Eun Soo Shim
Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Hyungju Ahn
Pohang Accelerator Laboratory Pohang Gyeongbuk 37673 Republic of Korea
Byung Ku Jung
Soong Ju Oh
Donghee Park
Kwang‐Hoon Lee
XR Frontier Optical Research Center Korea Photonics Technology Institute Gyeonggi‐do 14118 Republic of Korea
Seon Kyu Yoon
Byeonguk Chae
Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Sanghyun Lee
Gyoung Yong Lee
Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Jea Woong Jo
Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Sae Youn Lee
Department of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of Korea
Min‐Chul Park
Center for Quantum Technology Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul Republic of Korea
Jae Won Shim