Robust Imaging through Light‐Scattering Barriers via Energetically Modulated Multispectral Organic Photodetectors

S Seunghyun Oh S Suyeon Jo J Ji Hyeon Lee (Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea) H Hyun Woo Ko T Tae Hyuk Kim P Paul Hongsuck Seo G Gyeong Min Lee E Eun Soo Shim (Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea) H Hyungju Ahn (Pohang Accelerator Laboratory Pohang Gyeongbuk 37673 Republic of Korea) B Byung Ku Jung S Soong Ju Oh D Donghee Park K Kwang‐Hoon Lee (XR Frontier Optical Research Center Korea Photonics Technology Institute Gyeonggi‐do 14118 Republic of Korea) S Seon Kyu Yoon B Byeonguk Chae (Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea) S Sanghyun Lee G Gyoung Yong Lee (Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea) J Jea Woong Jo (Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea) S Sae Youn Lee (Department of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of Korea) M Min‐Chul Park (Center for Quantum Technology Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul Republic of Korea) J Jae Won Shim

Abstract

Abstract Emerging technologies, such as biomedical imaging and autonomous driving, rely on low‐noise near infrared (NIR) photodetectors. Organic photodetectors (OPDs) offer tremendous potential for these applications because of their seamless integration and NIR photosensing capabilities; however, their high noise levels have constrained widespread commercialization. Herein, the study demonstrates a bulk heterojunction (BHJ) NIR OPD featuring an ultralow noise current of 2.18 fA, enabled by a newly synthesized electron‐blocking layer (EBL), ((2,7‐dicyano‐9 H ‐fluorene‐9,9‐diyl)bis(propane‐3,1‐diyl))bis(phosphonic acid) (3PAFCN). Through diverse energetic modulative design strategies, 3PAFCN enables the OPD to achieve homogenous surface properties, an elevated interfacial energy barrier, and optimized BHJ morphology, culminating in a notable specific detectivity of 2.50 × 10 14  cm Hz 0.5  W −1 at 808 nm illumination under white‐noise conditions. These EBL design principles are broadly applicable for various photoactive materials. Demonstrations in single‐pixel imaging highlight the exceptional clarity of the 3PAFCN‐based OPD in low‐light and foggy environments, underscoring the potential of OPD technology for advanced imaging applications.

Article Details

Volume / Issue Vol. 37, Issue 28
Published July 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (21)

S

Seunghyun Oh

S

Suyeon Jo

J

Ji Hyeon Lee

Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea

H

Hyun Woo Ko

T

Tae Hyuk Kim

P

Paul Hongsuck Seo

G

Gyeong Min Lee

E

Eun Soo Shim

Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea

H

Hyungju Ahn

Pohang Accelerator Laboratory Pohang Gyeongbuk 37673 Republic of Korea

B

Byung Ku Jung

S

Soong Ju Oh

D

Donghee Park

K

Kwang‐Hoon Lee

XR Frontier Optical Research Center Korea Photonics Technology Institute Gyeonggi‐do 14118 Republic of Korea

S

Seon Kyu Yoon

B

Byeonguk Chae

Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea

S

Sanghyun Lee

G

Gyoung Yong Lee

Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea

J

Jea Woong Jo

Department of Energy & Materials Engineering Dongguk University Seoul 04620 Republic of Korea

S

Sae Youn Lee

Department of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of Korea

M

Min‐Chul Park

Center for Quantum Technology Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul Republic of Korea

J

Jae Won Shim