Role of Amorphous Phases in Mixed Conduction of Conjugated Regioblock Copolymers for Organic Electrochemical Synaptic Transistors

K Kwang‐Hun Choi (Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of Korea) S Seongil Im A Aaron Plant (Department of Chemical Engineering New Mexico Tech New Mexico 87801 USA) C Carlos Neri Soto (Department of Chemical Engineering New Mexico Tech New Mexico 87801 USA) H Hanna Lee C Changsoon Choi H Ho Won Jang J Jeong Ho Cho H Hyunsu Ju (Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology Seoul Republic of Korea) Y Youngmin Lee (Department of System Semiconductor Dongguk University Seoul Republic of Korea) J Jung Ah Lim (Yonsei-Korea Institute of Science and Technology Convergence Research Institute)

Abstract

Abstract Growing interest in organic electrochemical synaptic transistors (OECT‐STrs) based on conjugated polymer mixed ionic‐electronic conductors (CP‐MIECs) has intensified, leading to the need to establish clear design rules and fundamentally understand the distinct roles of crystalline and amorphous domains in the electrochemical doping behavior of CP‐MIEC films. Here, OECT‐STrs based on regioregular‐block‐regiorandom (regioblock) conjugated copolymers with precisely controlled crystallinity are demonstrated. The crystallinity of a poly(3‐hexylthiophene) regioblock copolymer is systematically tuned by varying the fraction of regiorandom blocks without altering the geometry or orientation of the crystalline phase. It is shown that incorporating an amorphous phase into the active channel of OECT‐STrs significantly enhances the neuromorphic learning efficiency by improving modulation uniformity. This improvement results from sequential polaron formation in the amorphous regions and bipolaron formation in the crystalline domains during potentiation. Additionally, crystalline phases provide better state retention at low potentiation states, while amorphous phases contribute to improved long‐term retention at high potentiation states by enhancing charge carrier localization through stronger Coulombic interactions. Neural network simulations based on actual device conductance demonstrate that OECT‐STrs with a high amorphous fraction consume only 18% of the power required by devices with a highly crystalline film, owing to the need for fewer repetitive learning cycles.

Article Details

Volume / Issue Vol. 37, Issue 45
Published November 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

K

Kwang‐Hun Choi

Electronic and Hybrid Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of Korea

S

Seongil Im

A

Aaron Plant

Department of Chemical Engineering New Mexico Tech New Mexico 87801 USA

C

Carlos Neri Soto

Department of Chemical Engineering New Mexico Tech New Mexico 87801 USA

H

Hanna Lee

C

Changsoon Choi

H

Ho Won Jang

J

Jeong Ho Cho

H

Hyunsu Ju

Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology Seoul Republic of Korea

Y

Youngmin Lee

Department of System Semiconductor Dongguk University Seoul Republic of Korea

J

Jung Ah Lim

Yonsei-Korea Institute of Science and Technology Convergence Research Institute