Room‐Temperature Magnetic Antiskyrmions in Canted Ferrimagnetic CoHo Alloy Films

J Jingyan Zhang P Pengwei Dou (School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China) J Jiawang Xu (Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University Hefei 1 , Anhui 230601,) J Jialiang Jiang H Haifeng Du T Tao Zhu (Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, Zhejiang Province, P. R. China) J Jia Luo G Guoping Zhao (College of Physics and Electronic Engineering, Sichuan Normal University) Y Yuanbo Wang Q Quangao Qiu (School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China) L Liangyu Feng (School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China) X Xiao Deng T Tianping Ma S Shiming Zhou (Hefei National Research Center for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of Sciences, National Synchrotron Radiation Laboratory, Key Laboratory of Surface and Interface Chemistry and Energy Catalysis of Anhui Higher Education Institutes, Department of Chemical Physics) B Baogen Shen (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences) S Shouguo Wang

Abstract

Abstract Magnetic antiskyrmions, the anti‐quasiparticles of magnetic skyrmions, possess alternating Bloch‐ and Néel‐type spin spirals, rendering them promising for advanced spintronics‐based information storage. To date, antiskyrmions are demonstrated in a few bulk materials featuring anisotropic Dzyaloshinskii–Moriya interactions and a limited number of artificial multilayers. Identifying novel film materials capable of hosting isolated antiskyrmions is critical for memory applications in topological spintronics. Herein, the formation of room‐temperature antiskyrmions in single ferrimagnetic CoHo rare‐metal alloy films of varying thicknesses, observed using Lorentz transmission electron microscopy is reported. Furthermore, rotating magnetic fields ( H ) are proposed to facilitate antiskyrmion nucleation and enhance their areal density by an order of magnitude compared to that in the same area under individual vertical H . In addition, experimental and phenomenological analysis confirm that antiskyrmion nucleation can be attributed to spin reorientation involving spontaneous canted magnetism, as evidenced by polarized neutron reflectometry. Micromagnetic simulations further show that the antiskyrmion density significantly depends on the magnitude of the rotating field. These findings expand the family of known antiskyrmion‐hosting materials and provide insights into their formation mechanisms, thus serving as a basis for their application in topological spintronics.

Article Details

Volume / Issue Vol. 37, Issue 8
Published February 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

J

Jingyan Zhang

P

Pengwei Dou

School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China

J

Jiawang Xu

Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University Hefei 1 , Anhui 230601,

J

Jialiang Jiang

H

Haifeng Du

T

Tao Zhu

Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, Zhejiang Province, P. R. China

J

Jia Luo

G

Guoping Zhao

College of Physics and Electronic Engineering, Sichuan Normal University

Y

Yuanbo Wang

Q

Quangao Qiu

School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China

L

Liangyu Feng

School of Materials Science and Engineering Key Laboratory of Advanced Materials and Devices for Post‐Moore Chips Ministry of Education University of Science and Technology Beijing Beijing 100083 China

X

Xiao Deng

T

Tianping Ma

S

Shiming Zhou

Hefei National Research Center for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of Sciences, National Synchrotron Radiation Laboratory, Key Laboratory of Surface and Interface Chemistry and Energy Catalysis of Anhui Higher Education Institutes, Department of Chemical Physics

B

Baogen Shen

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences

S

Shouguo Wang