Sandwich Engineering Advances Ductile Thermoelectrics

H Hao Wu X Xiao‐Lei Shi (School of Chemistry and Physics ARC Research Hub in Zero‐Emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland Australia) M Meng Li H Han Gao W Wei‐Di Liu (School of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality, and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia) M Min Zhu L Liang‐Cao Yin (State Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 China) D De‐Zhuang Wang (State Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 China) J Jingui Duan (State Key Laboratory of Materials-Oriented Chemical Engineering, School of Chemistry and Molecular Engineering) Z Zhi‐Gang Chen (School of Chemistry and Physics ARC Research Hub in Zero‐Emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland Australia) Q Qingfeng Liu

Abstract

Abstract Flexible thermoelectrics offer the possibility of utilizing human body heat to generate electricity, enabling self‐powered wearable electronics. Ductile and plastic semiconductors are promising materials for flexible thermoelectrics due to their inherent ductility and tunable electrical properties. However, balancing ductility with high thermoelectric performance remains challenging, especially for n‐type materials. Here, a novel n‐type ductile Ag 2 (S, Se)‐Ag 2 Se sandwich‐like thermoelectric film is designed with different functional layers, where the Ag 2 (S, Se) core layer provides ductile deformation ability and low thermal conductivity, while epitaxially grown highly oriented Ag 2 Se shell layers ensure superior electrical transport performance. This architecture achieves a record high figure‐of‐merit near room‐temperature range, 0.91 at 323 K, among n‐type ductile semiconductors while preserving excellent flexibility. Additionally, a flexible in‐plane device fabricated from this material delivers an exceptional power density of 26.5 W m −2 at a temperature difference of 50 K, demonstrating its great application potential for wearable electronics. Importantly, such novel sandwich engineering can pave the way to alleviate the compromise between thermoelectric performance and ductility in inorganic semiconductors.

Article Details

Volume / Issue Vol. 37, Issue 29
Published July 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

H

Hao Wu

X

Xiao‐Lei Shi

School of Chemistry and Physics ARC Research Hub in Zero‐Emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland Australia

M

Meng Li

H

Han Gao

W

Wei‐Di Liu

School of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality, and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia

M

Min Zhu

L

Liang‐Cao Yin

State Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 China

D

De‐Zhuang Wang

State Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 China

J

Jingui Duan

State Key Laboratory of Materials-Oriented Chemical Engineering, School of Chemistry and Molecular Engineering

Z

Zhi‐Gang Chen

School of Chemistry and Physics ARC Research Hub in Zero‐Emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland Australia

Q

Qingfeng Liu