Si‐CMOS Compatible Synthesis of Wafer‐Scale 1T‐CrTe₂ with Step‐Like Magnetic Transition

Abstract

Abstract2D room‐temperature ferromagnet CrTe2 is a promising candidate material for spintronic applications. However, its large‐scale and cost‐effective synthesis remains a challenge. Here, the fine controllable synthesis of wafer‐scale 1T‐CrTe2 films is reported on a SiO2/Si substrate using plasma‐enhanced chemical vapor deposition at temperatures below 400 °C. Magnetic hysteresis measurements reveal that the synthesized 1T‐CrTe2 films exhibit perpendicular magnetic anisotropy along with distinct step‐like magnetic transitions. It is found that 1T‐CrTe2 is susceptible to oxygen adsorption even in ambient conditions. The theoretical calculations indicate that the oxidation of surface layers is crucial for the absence of out‐of‐plane easy axis in few‐layer CrTe2, while the interlayer antiferromagnetic coupling among the upper surface layers leads to the observed step‐like magnetic transitions. The study provides a Si‐CMOS compatible approach for the fabrication of magnetic 2D materials and highlights how unintentional adsorbents or dopants can significantly influence the magnetic behaviors of these materials.