Simultaneous AoLP and DoLP Detection in a Bias‐Switchable PdSe <sub>2</sub> /MoS <sub>2</sub> /PdSe <sub>2</sub> Heterojunction for Polarization Discrimination

X Xiaofei Ma Z Zeping Wang (College of Pharmaceutical Sciences) Q Qinggang Qin (Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei 230601 P. R. China) J Jiawang Chen X Xue Liu F Fengxia Zou (Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and Nanotechnology Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences Hefei 230031 P. R. China) Z Zhengyu Xu W Wei Chen G Guanghai Li Y Yuan Li T Tianyou Zhai (State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering) L Liang Li

Abstract

Abstract On‐chip polarized photodetectors play a crucial role in advancing ultra‐compact optoelectronic devices for next‐generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe 2 /MoS 2 /PdSe 2 configuration. This photodetector features a rapid response time of 7–12 µs. In an imaging demonstration, it operates as a single‐polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias‐switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero‐bias conditions at room temperature, enabling dual‐binary coding for polarimetric‐encoded communication. These combination of features positions the photodetector as a highly promising candidate for on‐chip applications.

Article Details

Volume / Issue Vol. 37, Issue 16
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

X

Xiaofei Ma

Z

Zeping Wang

College of Pharmaceutical Sciences

Q

Qinggang Qin

Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei 230601 P. R. China

J

Jiawang Chen

X

Xue Liu

F

Fengxia Zou

Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and Nanotechnology Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences Hefei 230031 P. R. China

Z

Zhengyu Xu

W

Wei Chen

G

Guanghai Li

Y

Yuan Li

T

Tianyou Zhai

State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering

L

Liang Li