Simultaneous Interfacial Defect Passivation and Free‐Volume Reduction by Fluorinated Hole Transport Materials for High‐Performance Perovskite Solar Cells

Y Yifan Xing Z Zhijun Li (Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) Y Yongzhe Li M Meizi Wu (Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China) Y Yixin Jia (Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China) K Kunpeng Guo (Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P.R. China) Z Zheng Zhang J Jinpeng Zhou (Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China) Y Yang Luo J Jianhang Qiu L Linlin Dong T Tianyou Xie (Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China) S Shikai Zhao (Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China) Z Zhike Liu

Abstract

Abstract Interfacial defects and free‐volume between the perovskite layer and hole transport material (HTM) critically impact the efficiency and stability of perovskite solar cells (PSCs). In this work, the interfacial issues of the PSCs are addressed by strategically modulating the fluorine distribution in N,N ′‐bicarbazole (BCz)‐based HTMs, specifically, fluorine is introduced either asymmetrically and symmetrically on the peripheral groups, yielding AdF‐BCz and SdF‐BCz, respectively. Through a combination of experimental characterization and atomistic molecular dynamics simulations, it is demonstrated that AdF‐BCz exhibits superior interfacial passivation stability against Pb 2+ and I – related defects, as well as stronger adhesion to the perovskite surface compared to the fluorine‐free NF‐BCz and symmetrically substituted SdF‐BCz. Moreover, AdF‐BCz reduces interfacial free‐volume, promotes more intimate contact at the interface, and enhances the suppression of ion migration and perovskite degradation. Consequently, the PSCs fabricated with AdF‐BCz achieved a notable efficiency of 25.35%, outperforming devices based on SdF‐BCz (23.12%) and NF‐BCz (24.2%). Furthermore, unencapsulated AdF‐BCz based PSCs exhibit respectable stability, retaining 97% of their initial efficiencies after 2000 h under 30% relative humidity and 82% after 300 h of continuous heating at 85 °C.

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

Y

Yifan Xing

Z

Zhijun Li

Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Y

Yongzhe Li

M

Meizi Wu

Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China

Y

Yixin Jia

Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China

K

Kunpeng Guo

Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P.R. China

Z

Zheng Zhang

J

Jinpeng Zhou

Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China

Y

Yang Luo

J

Jianhang Qiu

L

Linlin Dong

T

Tianyou Xie

Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China

S

Shikai Zhao

Ministry of Education Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan Shanxi 030024 P. R. China

Z

Zhike Liu