Stable <i>P</i> ‐Type PbS Quantum Dot Ink for all‐Blade‐Coated Short‐Wavelength Infrared Photodiodes

H Han Wang J Jiaxiong Li (Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands) J Jacopo Pinna M Mordechai Kot (Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands) N Noah Y. N. van der Ploeg (Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands) M Maria A. Loi (Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands)

Abstract

ABSTRACT PbS colloidal quantum dots (CQDs) hold strong promise for short‐wave infrared (SWIR) optoelectronics. However, current photodetectors rely on p ‐type CQD layers fabricated via a laborious, defect‐prone layer‐by‐layer process. While robust n ‐type CQD inks have been realized, p ‐type inks remain challenging due to the absence of suitable ligands and solvents. An ideal solvent must ensure colloidal stability and be orthogonal to underlying layers. Here, we report a thiolate‐capped p ‐type PbS CQD ink using mercapto‐2‐propanol as the ligand and hexafluoro‐2‐propanol as the solvent. Stabilization arises from ligand–solvent hydrogen bonding, providing a shelf‐life exceeding six days. The solvent does not compromise pre‐deposited layers, enabling fully blade‐coated photodiodes in both n–p and p–n architectures. Devices fabricated with this ink exhibit a twofold increase in specific detectivity (2.55 × 10 12 Jones) and a 70% enhancement in bandwidth (155 kHz) compared to layer‐by‐layer controls, attributed to improved film morphology and charge transport.

Article Details

Volume / Issue Vol. 38, Issue 15
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (6)

H

Han Wang

J

Jiaxiong Li

Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands

J

Jacopo Pinna

M

Mordechai Kot

Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands

N

Noah Y. N. van der Ploeg

Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands

M

Maria A. Loi

Photophysics and OptoElectronics Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands