Stimuli‐Responsive Low‐Frequency Terahertz Absorption ON‐OFF Switchability in Spin‐Crossover Material

G Guanping Li (Department of Chemistry) O Olaf Stefanczyk (Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan) K Kunal Kumar L Laurent Guérin K Kazuki Nakamura (University of Rennes, CNRS, IPR (Institut de Physique) - UMR 6251) M Maryam Alashoor (Université de Rennes CNRS IPR (Institut de Physique de Rennes) – UMR 6251 Rennes F‐35000 France) L Lulu Xiong (Institute of Applied Physics and Materials Engineering) K Koji Nakabayashi (Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan) K Kenta Imoto (Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan) Y Yuiga Nakamura (Japan Synchrotron Radiation Research Institute) S Sumit Ranjan Maity (Japan Synchrotron Radiation Research Institute (JASRI) SPring‐8 Hyogo 679‐5198 Japan) G Guillaume Chastanet (Univ. Bordeaux CNRS Bordeaux INP ICMCB, UMR5026 Pessac F‐33608 France) N Nicholas F. Chilton S Shin‐ichi Ohkoshi (Department of Chemistry School of Science The University of Tokyo Tokyo Japan)

Abstract

AbstractThermal and optical‐induced ON‐OFF switchable materials show vast potential in various fields like sensors, spintronics, and electronic devices, but remain underexplored in the essential terahertz (THz) region. In this context, a unique 1D spin‐crossover (SCO) network, {[FeII(4‐cyanopyridine)2][HgII(µ‐SCN)2(SCN)(4‐cyanopyridine)]2}n (1), has been designed. Temperature‐dependent crystallographic, magnetic, and THz absorption spectroscopic studies indicate an abrupt SCO phenomenon from a high‐spin (HS) state to a complete or partial low‐spin (LS) state, depending on the cooling rate. At low temperatures, the LS state can be converted into the metastable HS state via the light‐induced excited spin‐state trapping (LIESST) effect using visible or near‐infrared lights. Both temperature and light reversibly modulate the THz absorbance (e.g., 0.82 and 1.37 THz) associated with phonons around Fe(II) centers, confirmed by first‐principles calculations and photocrystallographic analysis. This work advances comprehension of the intersection between structures, THz properties, and external‐stimuli switching effects and is pivotal for future THz device applications.

Article Details

Volume / Issue Vol. 37, Issue 38
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

G

Guanping Li

Department of Chemistry

O

Olaf Stefanczyk

Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

K

Kunal Kumar

L

Laurent Guérin

K

Kazuki Nakamura

University of Rennes, CNRS, IPR (Institut de Physique) - UMR 6251

M

Maryam Alashoor

Université de Rennes CNRS IPR (Institut de Physique de Rennes) – UMR 6251 Rennes F‐35000 France

L

Lulu Xiong

Institute of Applied Physics and Materials Engineering

K

Koji Nakabayashi

Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

K

Kenta Imoto

Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

Y

Yuiga Nakamura

Japan Synchrotron Radiation Research Institute

S

Sumit Ranjan Maity

Japan Synchrotron Radiation Research Institute (JASRI) SPring‐8 Hyogo 679‐5198 Japan

G

Guillaume Chastanet

Univ. Bordeaux CNRS Bordeaux INP ICMCB, UMR5026 Pessac F‐33608 France

N

Nicholas F. Chilton

S

Shin‐ichi Ohkoshi

Department of Chemistry School of Science The University of Tokyo Tokyo Japan