Stoichiometry‐Programmed MXenes via Precursor Engineering for High‐Performance EMI Shielding and Energy Storage

J Jaeeun Park (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) J Ju‐Hyoung Han (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) Y Yujin Chae (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) M Mincheal Kim (Department of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) J Juwon Han (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) Y Younggeun Jang (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) Y Young Ho Jin (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) J Jaewon Wang (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) S Shi‐Hyun Seok (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) Y Yeoseon Sim (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) Z Zonghoon Lee E Eunmi Choi S Soon‐Yong Kwon (Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea)

Abstract

ABSTRACT Device‐level performance in MXenes is dictated by architecture—planar nanosheets are optimal for electromagnetic interference (EMI) shielding, while scrolled structures enhance ion transport for energy storage—particularly when morphology is programmed at synthesis. Whether such architectures can be deterministically encoded through precursor stoichiometry remains unresolved. Here, we demonstrate that precise carbon stoichiometry control in Ti 3 AlC x O 2‐ x MAX phases tunes internal lattice strain and thereby directs the emergent MXene architecture. Carbon‐rich precursors ( x = 1.94) yield strain‐relieved, high‐crystalline nanosheets with metallic conductivity (∼23 300 S cm −1 ), enabling ultrathin films with record‐high EMI shielding performances across X‐ and W‐bands (≥ 2.0 × 10 6  dB cm 2 g −1 at 8.2 GHz for 29 nm; 108 dB at 100 GHz for 8 µm) and robust W‐band retention after 5,000 bending cycles (r = 2.5 mm). In contrast, carbon‐deficient precursors ( x = 1.71) introduce lattice compression and oxygen substitution, triggering spontaneous scrolling upon delamination. The resulting nanoscrolls offer exceptional ion accessibility, achieving 657 F g −1 at 2 mV s −1 with 99.4% retention over 12 000 cycles. This stoichiometry‐programmed approach establishes a synthesis‐stage lever linking MAX chemistry to MXene architecture and function, enabling application‐specific architecture design within established MAX/MXene synthesis and solution‐processing workflows for next‐generation electronics and energy storage.

Article Details

Volume / Issue Vol. 38, Issue 28
Published May 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

J

Jaeeun Park

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

J

Ju‐Hyoung Han

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

Y

Yujin Chae

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

M

Mincheal Kim

Department of Electrical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

J

Juwon Han

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

Y

Younggeun Jang

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

Y

Young Ho Jin

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

J

Jaewon Wang

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

S

Shi‐Hyun Seok

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

Y

Yeoseon Sim

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

Z

Zonghoon Lee

E

Eunmi Choi

S

Soon‐Yong Kwon

Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea