Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Abstract
AbstractTailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the 2D limit. Here, it is demonstrated that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few‐layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature‐dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ≈10 K. The experimental results are fully supported by first‐principles calculations, which link the observed effects to a strain‐driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine‐tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.
Article Details
Authors (20)
Eudomar Henríquez‐Guerra
BCMaterials, Basque Center for Materials Applications and Nanostructures Leioa 48940 Spain
Alberto M. Ruiz
Instituto de Ciencia Molecular, Universitat de València, Catedrático José Beltrán 2, 46980 Paterna, Spain
Marta Galbiati
Instituto de Ciencia Molecular (ICMol) Universitat de València Catedrático José Beltrán 2 Paterna 46980 Spain
Álvaro Cortés‐Flores
BCMaterials, Basque Center for Materials Applications and Nanostructures Leioa 48940 Spain
Daniel Brown
1University of Pennsylvania, Philadelphia, United States
Esteban Zamora‐Amo
2D Foundry Research Group Instituto de Ciencia de Materiales de Madrid (ICMM‐CSIC) Madrid E‐28049 Spain
Lisa Almonte
BCMaterials Basque Center for Materials, Applications and Nanostructures UPV/EHU Science Park Leioa Vizcaya 48940 Spain
Andrei Shumilin
Instituto de Ciencia Molecular, Universitat de València, Catedrático José Beltrán 2, 46980 Paterna, Spain
Juan Salvador‐Sánchez
Nanotechnology Group USAL–Nanolab, Departamento de Física Fundamental University of Salamanca Salamanca 37008 Spain
Ana Pérez‐Rodríguez
Nanotechnology Group USAL–Nanolab, Departamento de Física Fundamental University of Salamanca Salamanca 37008 Spain
Iñaki Orue
SGIker Medidas Magnéticas Leioa 48940 Spain
Andrés Cantarero
Instituto de Ciencia Molecular Universitat de València Paterna 46980 Spain
Andres Castellanos‐Gomez
2D Foundry Research Group Instituto de Ciencia de Materiales de Madrid (ICMM‐CSIC) Madrid E‐28049 Spain
Federico Mompeán
Mar García‐Hernández
Unidad Asociada UCM/CSIC “Laboratorio De Heteroestructuras con Aplicación En spintrónica” Madrid Spain
Efrén Navarro‐Moratalla
Instituto de Ciencia Molecular (ICMol) Universitat de València Catedrático José Beltrán 2 Paterna 46980 Spain
Enrique Diez
Nanotechnology Group USAL–Nanolab, Departamento de Física Fundamental University of Salamanca Salamanca 37008 Spain
Mario Amado
Nanotechnology Group USAL–Nanolab, Departamento de Física Fundamental University of Salamanca Salamanca 37008 Spain
José J. Baldoví
Instituto de Ciencia Molecular, Universitat de València, Catedrático José Beltrán 2, 46980 Paterna, Spain
M. Reyes Calvo
BCMaterials Basque Center for Materials, Applications and Nanostructures UPV/EHU Science Park Leioa Vizcaya 48940 Spain