Strain‐Induced Detectivity Enhancement in Intrinsically Stretchable Organic Photodetectors

H Hyesu Jeon (Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea) J Jongmin Oh J Jin‐Woo Lee (Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) H Hyeong Ju Eun (Department of Molecular Science and Technology Ajou University Suwon Republic of Korea) W Won Jung Kang (Department of Mechanical Engineering KAIST Daejeon Republic of Korea) D Du Hyeon Ryu (Photoenergy Research Center Korea Research Institute of Chemical Technology (KRICT) Daejeon Republic of Korea) C Chang Eun Song (Photoenergy Research Center Korea Research Institute of Chemical Technology (KRICT) Daejeon Republic of Korea) C Cheng Wang H Hyunbum Kang T Taek‐Soo Kim (Department of Mechanical Engineering KAIST Daejeon Republic of Korea) J Jong H. Kim (Cardiomyocyte Renewal Laboratory, Texas Heart Institute, Houston (Y.M., J.H.K., R.G.L., L.L., S.L., J.F.M.).) S Seungjin Lee B Bumjoon J. Kim (Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea)

Abstract

ABSTRACT Intrinsically stretchable organic photodetectors (IS‐OPDs) are essential for next‐generation wearable electronics requiring both mechanical durability and reliable optical sensing. However, current performance of IS‐OPDs degrades under tensile strain due to inherent trade‐offs between mechanical and optoelectronic properties in photoactive layers. Here, we report the development of the IS‐OPD that exhibits strain‐induced detectivity ( D ) enhancement, enabled by designing mechanically robust and efficient bilayer‐type photoactive architecture (EBL‐D). Specifically, we incorporate percolated polymer donor ( P D ):elastomer networks at the bottom layer, which simultaneously offer excellent stretchability and efficient charge transport. Subsequently, we deposit a small‐molecule acceptor layer atop the P D :elastomer layer, expanding the optical absorption range into the near‐infrared region while minimizing undesirable charge recombination. The resulting IS‐OPD based on the EBL‐D architecture maintains high responsivity and effectively suppresses dark current under strain. Consequently, the device exhibits 1.5‐fold improvement in specific detectivity from 1.9 × 10 13 to 2.8 × 10 13 Jones at λ = 860 nm under 75% strain, corresponding to a 1.3‐fold increase in D after accounting for the enlarged photoactive area. To the best of our knowledge, this work is the first to experimentally demonstrate strain‐induced D enhancement in stretchable OPDs.

Article Details

Volume / Issue Vol. 38, Issue 16
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

H

Hyesu Jeon

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea

J

Jongmin Oh

J

Jin‐Woo Lee

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

H

Hyeong Ju Eun

Department of Molecular Science and Technology Ajou University Suwon Republic of Korea

W

Won Jung Kang

Department of Mechanical Engineering KAIST Daejeon Republic of Korea

D

Du Hyeon Ryu

Photoenergy Research Center Korea Research Institute of Chemical Technology (KRICT) Daejeon Republic of Korea

C

Chang Eun Song

Photoenergy Research Center Korea Research Institute of Chemical Technology (KRICT) Daejeon Republic of Korea

C

Cheng Wang

H

Hyunbum Kang

T

Taek‐Soo Kim

Department of Mechanical Engineering KAIST Daejeon Republic of Korea

J

Jong H. Kim

Cardiomyocyte Renewal Laboratory, Texas Heart Institute, Houston (Y.M., J.H.K., R.G.L., L.L., S.L., J.F.M.).

S

Seungjin Lee

B

Bumjoon J. Kim

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea