Tailorable Polarity Switching and Optoelectronic Transition in a Gate‐Source Integrated 2D Ferroelectric Phototransistor
Abstract
ABSTRACT 2D ferroelectric phototransistors are innovative devices capable of regulating the optoelectronic characteristics of channel materials through ferroelectric polarization, demonstrating immense potential in photodetection, optical storage, and optical communication. Herein, we present a novel 2D ferroelectric phototransistor structure—Au/WSe 2 /CuCrP 2 S 6 /graphene—featuring an integrated gate–source electrode. By applying only the channel voltage, the major carrier type can be switched, and the optoelectronic performance is significantly enriched. Specifically, the structure enables positive/negative photoconduction switching at a low channel voltage of only 0.75 V, around which an optoelectronic transition occurs because of the ion migration. The optoelectronic transition manifests as a variation up to three orders of magnitude in the photocurrent decay time driven by the capture and release of photogenerated holes by Cu‐ion vacancies, as well as positive and negative photoconduction switching triggered by different laser pulse intervals. This novel architecture offers an integrated platform that harnesses the distinctive characteristics of 2D ferroelectrics to dynamically and precisely tune the optoelectronic properties of 2D semiconductors.
Article Details
Authors (17)
Lu Qi
Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, Institute of Frontier Chemistry, School of Chemistry and Chemical Engineering
Ming Chen
Xiaoliang Weng
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University 2 , Shenzhen 518060,
Zhuoxuan Chen
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Chenxu Kang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Shasha Zhou
School of Mechanical Engineering Qilu University of Technology (Shandong Academy of Sciences) Jinan P. R. China
Xiaokeng Wu
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Sichao Dai
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Zelong Li
Key Laboratory of Advanced Catalysis, Gansu Province; State Key Laboratory of Natural Product Chemistry, College of Chemistry and Chemical Engineering
Fangfang Huang
School of Materials Science and Engineering
Zecheng Yang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Baikui Li
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Fuwei Zhuge
Yuan Li
Yu‐Jia Zeng
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen P. R. China
Tianyou Zhai
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering
Shuangchen Ruan