Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations (Adv. Mater. 21/2026)
J
Junhyung Cho
(Department of Artificial Intelligence Semiconductor Engineering Hanyang University 222 Wangsimni‐ro Seoul 04763 Republic of Korea)
Y
Youngmin Han
W
Won Woo Lee
Y
Youngwoo Yoo
K
Kannan Udaya Mohanan
(School of Electrical Engineering and Computer Science, University of Ottawa 1 , Ottawa, Ontario K1N 6N5,)
C
Chang‐Hyun Kim
(School of Electrical Engineering and Computer Science University of Ottawa Ottawa ON Canada)
J
Junhwan Choi
Y
Young‐Joon Kim
(Department of Semiconductor Engineering Gachon University Seongnam Republic of Korea)
W
Wonjun Shin
(Department of Semiconductor Convergence Engineering Sungkyunkwan University 2 , Suwon,)
H
Hocheon Yoo
Article Details
Journal
Advanced Materials
Volume / Issue
Vol. 38, Issue 21
Published
April 01, 2026
ISSN
0935-9648
Publisher
Unknown Publisher
Authors (10)
J
Junhyung Cho
Department of Artificial Intelligence Semiconductor Engineering Hanyang University 222 Wangsimni‐ro Seoul 04763 Republic of Korea
Y
Youngmin Han
W
Won Woo Lee
Y
Youngwoo Yoo
K
Kannan Udaya Mohanan
School of Electrical Engineering and Computer Science, University of Ottawa 1 , Ottawa, Ontario K1N 6N5,
C
Chang‐Hyun Kim
School of Electrical Engineering and Computer Science University of Ottawa Ottawa ON Canada
J
Junhwan Choi
Y
Young‐Joon Kim
Department of Semiconductor Engineering Gachon University Seongnam Republic of Korea
W
Wonjun Shin
Department of Semiconductor Convergence Engineering Sungkyunkwan University 2 , Suwon,
H
Hocheon Yoo
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