Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations
Abstract
Abstract Tunable analog activation functions are essential for energy‐efficient artificial intelligence (AI) hardware. Two transistor designs are presented: the sigmoid‐like activation function transistor (SA‐transistor) and the Gaussian‐like activation function transistor (GA‐transistor), which implement analog sigmoid and Gaussian functions using a screen gate structure. In the SA‐transistor, adjusting the screen gate voltage ( V Screen‐G ) enables precise control of the sigmoid slope and saturation level. In the GA‐transistor, the amplitude and standard deviation of the Gaussian response are tunable through the same mechanism. These transistors enable precise and continuous tuning of analog activation parameters such as slope, amplitude, and width at the device level. This controllability allows hardware‐optimized neural computations tailored to specific tasks or datasets. Applied in real‐world tasks, the SA‐transistor improved lung magnetic resonance imaging (MRI) classification accuracy from 77% to 84%, and the GA‐transistor raised the time‐series forecasting coefficient of determination ( R 2 ) from 0.82 to 0.93. Furthermore, by assembling these devices into a hardware‐based multilayer perceptron (MLP), robust inference is demonstrated on the IRIS dataset with 96.7% overall accuracy. This system‐level validation highlights that analog activation transistors can directly support neuromorphic accelerators without digital post‐processing, reducing circuit complexity and power consumption while maintaining high classification fidelity.
Article Details
Authors (10)
Junhyung Cho
Department of Artificial Intelligence Semiconductor Engineering Hanyang University 222 Wangsimni‐ro Seoul 04763 Republic of Korea
Youngmin Han
Won Woo Lee
Youngwoo Yoo
Kannan Udaya Mohanan
School of Electrical Engineering and Computer Science, University of Ottawa 1 , Ottawa, Ontario K1N 6N5,
Chang‐Hyun Kim
School of Electrical Engineering and Computer Science University of Ottawa Ottawa ON Canada
Junhwan Choi
Young‐Joon Kim
Department of Semiconductor Engineering Gachon University Seongnam Republic of Korea
Wonjun Shin
Department of Semiconductor Convergence Engineering Sungkyunkwan University 2 , Suwon,
Hocheon Yoo