Tuning Transition Dipole Moment Alignment via Bifunctional Ligands in Perovskite Nanocrystal Light‐Emitting Diodes

W Weiyang Zhou (Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea) S Seungchan Ham (Department of Materials Science and Engineering Inha University Incheon 22212 Republic of Korea) H Hock Beng Lee (Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea) K Keum‐Jin Ko (Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea) J Jiajun Luo (Key Laboratory of Multi-Cell Systems, Shanghai Institute of Biochemistry and Cell Biology, Center for Excellence in Molecular Cell Science, University of Chinese Academy of Sciences, Chinese Academy of Sciences) S Siwei He (School of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou China) J Jeong‐Hwan Lee (Department of Materials Science and Engineering Inha University Incheon Republic of Korea) J Jae‐Wook Kang (Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea)

Abstract

Abstract Perovskite quantum dot light‐emitting diodes (PeQLEDs) are promising for display and lighting applications. As the internal quantum efficiency of the state‐of‐the‐art PeQLEDs approaches unity, enhancing photon extraction becomes critical due to severe optical losses. The orientation of transition dipole moments (TDMs) plays a key role in determining the light outcoupling efficiency ( η out ). Herein, the influence of nanocrystal (NC) shape and stacking behavior on the alignment of TDMs in the emissive layer is investigated. To modulate the TDMs, a facile ligand exchange strategy with bifunctional 1,5‐naphthalenedisulfonic acid (NDSA) is introduced, which suppresses surface defects and improves carrier transport efficiency. More importantly, it enhances long‐range NC stacking and modifies the dielectric environment of the emissive layer (EML), which increases the fraction of in‐plane TDMs from 60% to 70%. This improved orientation is instrumental in η out from 16.15% to 20.09%. As a result, devices with NDSA modified exhibit a peak external quantum efficiency (EQE) of 22.63% at 5127 cd m − 2 and a maximum luminance of 13 950 cd m − 2 , significantly outperforming the pristine device. EQE remains above 20% across 400–8000 cd m − 2 , and device lifetime improves by 400% under ambient conditions with encapsulation.

Article Details

Volume / Issue Vol. 38, Issue 8
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

W

Weiyang Zhou

Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea

S

Seungchan Ham

Department of Materials Science and Engineering Inha University Incheon 22212 Republic of Korea

H

Hock Beng Lee

Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea

K

Keum‐Jin Ko

Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea

J

Jiajun Luo

Key Laboratory of Multi-Cell Systems, Shanghai Institute of Biochemistry and Cell Biology, Center for Excellence in Molecular Cell Science, University of Chinese Academy of Sciences, Chinese Academy of Sciences

S

Siwei He

School of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou China

J

Jeong‐Hwan Lee

Department of Materials Science and Engineering Inha University Incheon Republic of Korea

J

Jae‐Wook Kang

Department of Flexible and Printable Electronics LANL‐JBNU Engineering Institute‐Korea Jeonbuk National University Jeonju 54896 Republic of Korea