Twist‐Angle Controllable Transfer of 2D Materials via Water Vapor Intercalation
Abstract
Abstract Transfer technique has become an indispensable process in the development of two‐dimensional materials (2DMs) and their heterostructures, as it determines the quality of the interface and the performance of the resulting devices. However, how to flexibly and conveniently fabricate two‐dimensional (2D) twisted heterostructures with high‐quality interfaces has always been a formidable challenge. Here, a quasi‐dry transfer technique assisted by water vapor intercalation (WVI) is developed, which can be flexibly used to fabricate twisted heterostructures. This method leverages a charged hydrophilic surface to facilitate WVI at the interface, enabling the clean and uniform detachment of 2DMs from the substrate. Using this method, the twisted monolayer/few‐layer graphene and 2D quasicrystal‐like WS 2 /MoS 2 , highlighting the surface/interface cleanness and angle‐controlled transfer method is successfully fabricated. Besides, suspended structures of these 2DMs and heterostructures are fabricated, which offers substantial convenience for studying their intrinsic physical properties. Further, a high‐performance hBN/graphene/hBN superlattice device with the mobility of ≈199,000 cm 2 V −1 s −1 at room temperature is fabricated. This transfer technique ingeniously combines the advantages of dry transfer and wet transfer. Moreover, it features excellent scalability, providing crucial technical support for future research on the fundamental physical properties of 2DMs and the fabrication of quantum devices with outstanding performance.
Article Details
Authors (22)
Xu Han
Yun‐Yun Dai
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
Peng‐Fei Ding
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
Jie Xing
College of Materials Science and Engineering, Sichuan University , 610064 Chengdu,
Tai‐Min Miao
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Zhen‐Yu Sun
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Wen‐Tao Wang
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
De‐Cheng Zhang
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
Jia‐Hao Yan
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
Yang‐Kun Zhang
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Dong‐Ke Rong
School of Science China University of Geosciences Beijing 100083 China
Zi‐Hao Guo
State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China Advanced Institute for Soft Matter Science and Technology, School of Emergent Soft Matter South China University of Technology Guangzhou 510640 P.R. China
Hui Chen
Meng‐Ting Huang
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China
Jia‐Dong Zhou
School of Physics Beijing Institute of Technology Beijing 100081 China
Luo‐Jun Du
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Bao‐Jie Feng
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Jian‐Gang Guo
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Guang‐Yu Zhang
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Yang Chai
Yuan Huang
Ye‐Liang Wang
School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing 100081 China