Two‐Dimensional Cr <sub>3</sub> Te <sub>4</sub> /WS <sub>2</sub> /Fe <sub>3</sub> GeTe <sub>2</sub> /WTe <sub>2</sub> Magnetic Memory with Field‐Free Switching and Low Power Consumption

K Kun He B Bailing Li J Jianhang Nie (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) Y Yanglong Hou (School of Materials) C Changmeng Huan (Chip Manufacturing Department Hunan Sanan Semiconductor Co., Ltd. Changsha 410082 China) M Min Hong (Centre for Future Materials, School of Science, Engineering and Digital Technologies) J Jiantao Du (School of Materials Science and Engineering Beihang University Beijing 100191 China) Y Yang Chen J Jingmei Tang C Chen Yi Y Ya Feng S Shaojun Liu S Sumei Wu (School of Materials Science and Engineering, Dalian Jiaotong University 1 , Dalian 116028,) M Miaomiao Liu H Hongmei Zhang Y Yukun Guo (State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China) R Ruixia Wu J Jia Li X Xingqiang Liu Y Yuan Liu Z Zhongming Wei L Lei Liao (Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences) B Bo Li X Xidong Duan

Abstract

Abstract Spin‐orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field‐free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT‐memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor‐deposited two‐dimensional (2D) Cr 3 Te 4 /WS 2 van der Waals (vdW) heterostructures onto 2D Fe 3 GeTe 2 (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non‐volatility, multiple output states, and impressive cycling durability. MTJs with thin WS 2 barriers (fewer than six layers) exhibit a linear tunneling effect, achieving a low resistance‐area product (RA) of 15.5 kΩ·µm 2 using bilayer WS 2 , which facilitats low‐power operation. Furthermore, the different 2D magnets display a significant anti‐parallel window of up to 8 kOe. SOT‐memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT‐memory. This research has pointed out a new direction for constructing low power consumption SOT‐memory with PMA field‐free switching.

Article Details

Volume / Issue Vol. 37, Issue 13
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (24)

K

Kun He

B

Bailing Li

J

Jianhang Nie

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

Y

Yanglong Hou

School of Materials

C

Changmeng Huan

Chip Manufacturing Department Hunan Sanan Semiconductor Co., Ltd. Changsha 410082 China

M

Min Hong

Centre for Future Materials, School of Science, Engineering and Digital Technologies

J

Jiantao Du

School of Materials Science and Engineering Beihang University Beijing 100191 China

Y

Yang Chen

J

Jingmei Tang

C

Chen Yi

Y

Ya Feng

S

Shaojun Liu

S

Sumei Wu

School of Materials Science and Engineering, Dalian Jiaotong University 1 , Dalian 116028,

M

Miaomiao Liu

H

Hongmei Zhang

Y

Yukun Guo

State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China

R

Ruixia Wu

J

Jia Li

X

Xingqiang Liu

Y

Yuan Liu

Z

Zhongming Wei

L

Lei Liao

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences

B

Bo Li

X

Xidong Duan