Ultra‐Broadband Polarization‐Sensitive O‐Doped ZrTe <sub>3</sub> Photodetector Induced by UV Laser
Abstract
Abstract Next‐generation photodetectors demand multidimensional information perception, high responsivity, and low noise equivalent power across an ultra‐wide spectral range. Polarization‐sensitive photodetectors based on anisotropic low‐dimensional materials offer a promising solution, yet inherent material properties impose severe performance trade‐offs. Here, this challenge is addressed by developing an ultra‐broadband polarization photodetector with back‐to‐back Schottky barriers, fabricated via UV laser treatment of semi‐metallic ZrTe 3 . The results demonstrate that the ZrTe 3 polarization photodetector achieves ultra‐wide spectral polarized light response from UV to terahertz (355 nm–1.43 mm) with antenna‐free integration at room temperature. Notably, it exhibits a high responsivity of 0.31 A W −1 with rise/fall times of 729 ns/14.9 µs at 532 nm. One‐year‐long photoresponse tests in air demonstrate stability for ultra‐broadband ZrTe 3 polarization detector (UBPD). This work highlights the transformative potential of ZrTe 3 for future wide‐spectrum polarization‐sensitive applications.
Article Details
Authors (11)
Chunyu Song
Jiahao Chen
Spin-X Institute, School of Chemistry and Chemical Engineering, School of Biomedical Sciences and Engineering, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, State Key Laboratory of Luminescent Materials and Devices
Xin Ding
Department of Neurology, University of Iowa
Yingtian Xu
State Key Laboratory of High Power Semiconductor Laser Changchun University of Science and Technology No. 7089 Weixing Road Changchun 130022 China
Hang Xu
Hui Li
Wanfu Shen
Chunguang Hu
He Zhang
Silei Wang
School of Physical Science and Technology, Ningbo University 1 , Ningbo 315211,
Jianquan Yao