Ultrahigh Exchange Bias Field/Coercive Field Ratio in In Situ Formed Two‐Dimensional Magnetic Te‐Cr<sub>2</sub>O<sub>3</sub>/Cr<sub>5</sub>Te<sub>6</sub> Heterostructures
Abstract
AbstractThe exchange bias (EB) effect is a fundamental magnetic phenomenon, in which the exchange bias field/coercive field ratio (|HEB/HC|) can improve the stability of spintronic devices. Two‐dimensional (2D) magnetic heterostructures have the potential to construct low‐power and high‐density spintronic devices, while their typically air unstable and |HEB/HC| lesser, limiting the possibility of applications. Here, 2D Cr5Te6 nanosheets have been systematically synthesized with an in situ formed ≈2 nm‐thick Te doped Cr2O3 layer (Te‐Cr2O3) on the upper surface by chemical vapor deposition (CVD) method. The strong and air stable EB effect, achieving a |HEB/HC| of up to 80% under an ultralow cooling field of 0.01 T, which is greater than that of the reported 2D magnetic heterostructures. Meanwhile, the uniformity of thickness and chemical composition of the Te‐Cr2O3 layer can be controlled by the growth conditions which are highly correlated with the EB effect of 2D Te‐Cr2O3/Cr5Te6 heterostructures. First‐principles calculations show that the Te‐Cr2O3 can provide uncompensated spins in the Cr2O3, thus forming strong spin pinning effect. The systematical investigation of the EB effect in 2D Te‐Cr2O3/Cr5Te6 heterostructures with high |HEB/HC| will open up exciting opportunities in low‐power and high‐stability 2D spintronic devices.
Article Details
Authors (27)
Chen Yi
Zhou Li
School of Materials Science and Engineering
Qiuqiu Li
Hunan Key Laboratory of Two‐Dimensional Materials State Key Laboratory for Chemo/Biosensing and Chemometrics Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China Changsha Semiconductor Technology and Application Innovation Research Institute School of Physics and Electronics College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China
Bailing Li
Hongmei Zhang
Kun He
Liqiang Zhang
Zucheng Zhang
Ya Feng
Yingying Liu
Institute of Intelligent Machines, Hefei Institutes of Physical Science
Miaomiao Liu
Di Wang
Shanhao Li
Jingmei Tang
Peng Gao
Manli Zhu
Hunan Key Laboratory of Two‐Dimensional Materials State Key Laboratory for Chemo/Biosensing and Chemometrics Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China Changsha Semiconductor Technology and Application Innovation Research Institute School of Physics and Electronics College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China
Yanru Wang
Ruixia Wu
Jia Li
Xingqiang Liu
Shulin Chen
Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits)
Chao Ma
Yuan Liu
Zhongming Wei
Lei Liao
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
Bo Li
Xidong Duan