Ultrasensitive and Ultrafast Self‐Powered Ultraviolet Photodetector Array for Solar‐Blind and Weak‐Light Imaging

W Weilong Deng (National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin 150001 China) X Xiangyu Fan Y Yuxuan Du (State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200438, China) S Shengyu Ma (School of Physics Harbin Institute of Technology Harbin 150001 China) H Hanxu Zhang (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,) M Mengting Liu (Center of Nanomaterials for Renewable Energy, State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering) H Hao Zhang S Shuo Chen Q Qiang Fu Y Yumin Zhang Y Yang Li S Siyu Han (School of Materials Science and Engineering) Y Yang Wang T Tai Yao (National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin 150001 China) X Xianjie Wang B Bo Song

Abstract

Abstract Self‐powered ultraviolet (UV) photodetectors (PDs) based on wide bandgap semiconductors (WBGSs) and their heterostructures face challenges in ultrasensitive and ultrafast weak‐light detection capabilities. In this work, an 8 × 8 UV photodetector array based on CuNiO 2 /SiC p–n heterojunctions is demonstrated to operate in both solar‐blind and weak‐light conditions. The device achieves a weak‐light detection limit of 4.6 nW·mm −2 , a fast response time of 45 ns, and a high responsivity of 104.2 mA·W −1 and a detectivity of 3.4 × 10 12 Jones, outperforming self‐powered UV PDs based on SiC and Ga 2 O 3 ‐based WBGSs and their heterostructures. This excellent performance of the device originates from the high interface quality, large built‐in electric field, Fowler‐Nordheim tunneling (FNT) of charge transport, and enhancing light absorption at the heterostructures. Moreover, the detector exhibits a low noise power density below 10 −22 A 2 ·Hz −1 and a high cutoff frequency of 5 kHz, enabling it to maintain high‐contrast real‐time reflection imaging capability under solar illumination.

Article Details

Volume / Issue Vol. 38, Issue 5
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

W

Weilong Deng

National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin 150001 China

X

Xiangyu Fan

Y

Yuxuan Du

State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200438, China

S

Shengyu Ma

School of Physics Harbin Institute of Technology Harbin 150001 China

H

Hanxu Zhang

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,

M

Mengting Liu

Center of Nanomaterials for Renewable Energy, State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering

H

Hao Zhang

S

Shuo Chen

Q

Qiang Fu

Y

Yumin Zhang

Y

Yang Li

S

Siyu Han

School of Materials Science and Engineering

Y

Yang Wang

T

Tai Yao

National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin 150001 China

X

Xianjie Wang

B

Bo Song