Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems
Abstract
Abstract Ferroelectric materials represent a frontier in semiconductor research, offering the potential for novel optoelectronics. AlScN material is a kind of outstanding ferroelectric semiconductor with strong residual polarization, high Curie temperature, and mainstream semiconductor fabrication compatibility. However, it is challenging to realize multi‐state optical responders due to their limited light sensitivity. Here, a two‐terminal AlScN/p‐i‐n GaN heterojunction ultraviolet optoelectronic synapse is fabricated, overcoming this limitation by leveraging hole capture at the AlScN/p‐GaN hetero‐interface for multi‐state modulation. The novel structure maintains excellent memristor characteristics based on the ferroelectric of AlScN, realizing an on/off ratio of 9.36 × 10 5 . More importantly, the device can mimic synaptic characteristics essential for artificial vision systems, achieving an image recognition accuracy of 93.7% with a weight evolution nonlinearity of 0.26. This approach not only extends the applications of AlScN in optoelectronics but also paves the way for advanced artificial vision systems with image preprocessing and recognition capabilities. The findings provide a step forward in the development of non‐volatile memories with potential for on‐chip sensing and computing.
Article Details
Authors (13)
Zhiwei Xie
Key Laboratory of Luminescence Science and Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Dongnanhu Road No. 3888 Changchun 130033 China
Ke Jiang
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics
Shanli Zhang
State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,
Zhongqiang Wang
Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China
Xuanyu Shan
Centre For Advanced Optoelectronic Functional Materials Research Northeast Normal University Changchun China
Bingxiang Wang
State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,
Jianwei Ben
State Key Laboratory of Luminescence Science and Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China
Mingrui Liu
College of New Energy, State Key Laboratory of Heavy Oil Processing
Shunpeng Lv
State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,
Yang Chen
Yuping Jia
State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 1 , Changchun 130033,
Xiaojuan Sun
Dabing Li