Unified Interface–Bulk Enhancements in Wide‐Bandgap Perovskites Enabled by Bifunctional Cyanoacetic Acid for Textured Silicon/Perovskite Tandem Solar Cells

S Shaojie Yuan (Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology 1 , Wuhan 430074,) F Fengchun Cai (Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China) Z Zhengjie Zhu K Kaitian Mao (Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China) H Hongguang Meng (State Key Laboratory of Photoelectric Conversion and Utilization of Solar Energy, Qingdao New Energy Shandong Laboratory, Qingdao Institute of Bioenergy and Bioprocess Technology) Y Yueying Zhang M Minghui Li H Huitian Guo (Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China) L Lianyou Tang (State Key Laboratory of Precision and Intelligent Chemistry Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei China) F Feiyang Liu J Jinshuai Zhang C Chuanxiao Xiao J Jixian Xu (State Key Laboratory of Precision and Intelligent Chemistry Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei China)

Abstract

ABSTRACT Wide‐bandgap (WBG) perovskite solar cells (PSCs) are essential for silicon/perovskite tandems but are hampered by buried‐interface disorder, bulk defects, and ion‐migration–induced degradation, challenges that are further amplified on textured silicon. We report a synergistic interface–bulk regulation strategy by incorporating cyanoacetic acid (CA) into both the self‐assembled monolayers (SAM) and the perovskite precursor. At the buried interface, CA anchors to substrate and interacts with SAM, forming a molecular bridge that suppresses SAM aggregation and homogenizes interfacial energetics. Within the perovskite, CA coordinates with undercoordinated Pb 2+ and stabilizes halides, producing uniform films with reduced trap densities. These enhancements strengthen the interface and suppress ion migration, nearly doubling the reverse‐bias breakdown voltage. The textured silicon/perovskite interface exhibits enhanced and more balanced interfacial electric fields across silicon pyramids. The optimized 1.66‐eV PSC achieves a steady‐state power conversion efficiency (PCE) of 24.43%, while integration into textured silicon tandem device yields a champion PCE of 32.43% with 93% retention after 1000 h.

Article Details

Volume / Issue Vol. 38, Issue 19
Published April 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

S

Shaojie Yuan

Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology 1 , Wuhan 430074,

F

Fengchun Cai

Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China

Z

Zhengjie Zhu

K

Kaitian Mao

Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China

H

Hongguang Meng

State Key Laboratory of Photoelectric Conversion and Utilization of Solar Energy, Qingdao New Energy Shandong Laboratory, Qingdao Institute of Bioenergy and Bioprocess Technology

Y

Yueying Zhang

M

Minghui Li

H

Huitian Guo

Key Laboratory of Precision and Intelligent Chemistry Department of Materials Science and Engineering University of Science and Technology of China Hefei China

L

Lianyou Tang

State Key Laboratory of Precision and Intelligent Chemistry Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei China

F

Feiyang Liu

J

Jinshuai Zhang

C

Chuanxiao Xiao

J

Jixian Xu

State Key Laboratory of Precision and Intelligent Chemistry Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei China