Unlocking High Dielectric Tunability and Exceptional Electrocaloric Performance via Growth‐Driven Domain Dynamics

G Garima Kaura (Materials Research Centre Indian Institute of Science Bangalore India) N Naveen Goyal (Materials Research Centre) F Fang Liu S Sa Ma (School of Materials Science and Engineering Zhejiang University Hangzhou China) Y Yongjun Wu T T. S. Akhil Raman (CASEST School of Physics University of Hyderabad Hyderabad Telangana India) B Basanta Roul S Saluru Baba Krupanidhi S Sourav Chowdhury Z Zuhuang Chen Y Yun‐Long Tang (Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) K K. C. James Raju (School of Physics, University of Hyderabad 1 , Hyderabad, Telangana 500046,) Z Zijian Hong N N. Ravishankar (Materials Research Centre) S Sujit Das (Department of Chemistry)

Abstract

ABSTRACT Achieving simultaneously high dielectric tunability, thermal and frequency stability, and efficient electrocaloric performance remains a major unresolved challenge in lead‐free ferroelectric films. These constraints limit the practical deployment of environmentally benign tunable components and solid‐state refrigeration technologies. To address this gap, we investigate Ba 0 . 7 Ca 0 . 3 TiO 3 thin films grown at 630, 670, and 700°C, establishing quantitative growth–structure–property correlations that enable co‐optimization of these functionalities. By integrating dielectric spectroscopy, Rayleigh analysis, phase‐field simulations, and electrocaloric measurements, we disentangle intrinsic and extrinsic contributions governing dielectric and electrocaloric behaviour. Film grown at 630°C exhibit the highest tunability (∼90%), dominated by extrinsic mechanisms with mixture of a/c nano‐domains, whereas film grown at 670°C yields a stable tunability (∼85%), low dielectric loss (<0.05), high cumulative quality factor ( CQF ∼1.6 × 10 4 ), and excellent thermal (300–420 K) and frequency (10 kHz–1 MHz) stability. In contrast, films grown at 700°C display the best performance of electrocaloric coefficient (ξ ∼0.025 K cm kV − 1 ), refrigerant capacity ( RC of ∼1900 J kg − 1 ) and an outstanding relative cooling power (RCP ≈ 1755 K 2 ), among the highest reported for lead‐free films. These results establish growth temperature as an effective control parameter for overcoming tunability–stability trade‐offs in adaptive microelectronics and solid‐state refrigeration.

Article Details

Volume / Issue Vol. 38, Issue 42
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (15)

G

Garima Kaura

Materials Research Centre Indian Institute of Science Bangalore India

N

Naveen Goyal

Materials Research Centre

F

Fang Liu

S

Sa Ma

School of Materials Science and Engineering Zhejiang University Hangzhou China

Y

Yongjun Wu

T

T. S. Akhil Raman

CASEST School of Physics University of Hyderabad Hyderabad Telangana India

B

Basanta Roul

S

Saluru Baba Krupanidhi

S

Sourav Chowdhury

Z

Zuhuang Chen

Y

Yun‐Long Tang

Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

K

K. C. James Raju

School of Physics, University of Hyderabad 1 , Hyderabad, Telangana 500046,

Z

Zijian Hong

N

N. Ravishankar

Materials Research Centre

S

Sujit Das

Department of Chemistry