Unveiling of Unpaired Surface Spins Regulated Magnetism in 2D α‐Te Nanosheets: an Implication on Magnetoelectric Driven Hydrogen Evolution

D Dalip Saini (Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India) K Krishankant (Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India) H Hari Krishna Mishra (Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India) B Bidya Mondal (Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India) S Sudip Naskar (Institute of Nano Science and Technology, Sector 81, Mohali 140306, Punjab, India) K Kanupriya (Department of Physics Indian Institute of Technology Ropar Rupnagar 140001 India) A Anjali Prajapati (Department of Physics SRM University AP Amaravati Andhra Pradesh 522240 India) A Asif Iqbal (22Dr. Bhubaneswar Borooah Cancer Institute, Guwahati, India) D Debangsu Roy R Ranjit Thapa (Department of Physics) S Shankar Ram (Materials Science Centre Indian Institute of Technology Kharagpur 721302 India) D Dipankar Mandal (Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India)

Abstract

Abstract Quasi‐2D tellurium (Te) unlocks surface spins (of valence 5p4 electrons) of tunable ferromagnetic order and response to strain‐engineered electronic properties of widespread applications. In spin–orbit coupling, the inversion symmetry is broken in a 1 S 0 → 3 S 1 spin‐transition of the ground electronic state, a synergetic pathway to charge spin‐order under applied driving forces. The surface magnetism, combined with the ferroelectricity, gives a giant magnetoelectric response (absent in 1 S 0 bulk Te state) that is explored to boost the H 2 evolution reaction (HER) with 2D α‐Te as a synergetic catalyst. High‐quality 2D α‐Te synthesized as nanosheets is ordered primarily along (001) facets at duly enhanced d 001 atomic spacing in the 5s 2 ‐Te lone pair electrons (diamagnetic) are spaced (Coulomb repulsion) via the 5p 2 unpaired spins. Poled 2D α‐Te in small fields, such as 30 mT, presents a HER overpotential that is decreased up to 100 mV, while the Tafel slope is declined up to 138 from 211 mV dec −1 for the bulk sample. The electrochemical stability of 2D α‐Te is found quite impressive with 93% current retention (71% if non‐magnetized) under chronoamperometric conditions. The results present that the 2D α‐Te plays a game‐changing role towards sustainable energy technologies, spintronics, and next‐generation magnetoelectric devices.

Article Details

Volume / Issue Vol. 38, Issue 7
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

D

Dalip Saini

Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India

K

Krishankant

Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India

H

Hari Krishna Mishra

Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India

B

Bidya Mondal

Quantum Materials and Devices Unit Institute of Nano Science and Technology Knowledge City, Sector 81 Mohali 140306 India

S

Sudip Naskar

Institute of Nano Science and Technology, Sector 81, Mohali 140306, Punjab, India

K

Kanupriya

Department of Physics Indian Institute of Technology Ropar Rupnagar 140001 India

A

Anjali Prajapati

Department of Physics SRM University AP Amaravati Andhra Pradesh 522240 India

A

Asif Iqbal

22Dr. Bhubaneswar Borooah Cancer Institute, Guwahati, India

D

Debangsu Roy

R

Ranjit Thapa

Department of Physics

S

Shankar Ram

Materials Science Centre Indian Institute of Technology Kharagpur 721302 India

D

Dipankar Mandal

Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India