Vapor‐Flux Growth of c‐BP Single Crystals With Concurrently High Electrical Resistivity and Isotope‐Enhanced High Thermal Conductivity
Abstract
ABSTRACT Cubic boron phosphide (c‐BP) is another class of high thermal conductivity material alongside cubic boron arsenide (c‐BAs) and diamond, as a promising candidate semiconductor for thermal management applications. Here, we report a new vapor‐flux growth method that enables the growth of several mm‐size crystals with significantly reduced defect densities, impurity inclusions, and achieving room temperature resistivity as high as 600 Ω cm. The resistivity value is much higher than previous reports and approaches the semi‐insulating regime, a desirable characteristic of semiconductors. Most notably, the isotope‐enriched c‐ 10 BP shows thermal conductivity values that are significantly higher than natural c‐BP and c‐ 11 BP across a wide temperature range. Specifically, at room temperature the corresponding values are ≈600 W m −1 K −1 , 488 W m −1 K −1 and 540 W m −1 K −1 , respectively. This enhancement is attributed to the weaker anharmonic phonon‐phonon interaction in c‐ 10 BP compared to c‐ 11 BP, as explained by first principles calculations.
Article Details
Authors (21)
Yulin Zhu
Department of Physics The University of Texas at Dallas Richardson Texas USA
Aswin L. N. Kondusamy
Ke Chen
Pawan Koirala
Department of Physics, The University of Texas at Dallas 1 , Richardson, Texas 75080,
Hanlin Wu
Department of Physics, The University of Texas at Dallas 1 , Richardson, Texas 75080,
Mahammed S. Patel
Department of Physics, The University of Texas at Dallas 1 , Richardson, Texas 75080,
Evan R. Glaser
U.S. Naval Research Laboratory
Sam White
James C. Culbertson
Electronics Science and Technology Division, US Naval Research Laboratory 2 , Washington, DC 20375-5347,
John L. Lyons
United States Naval Research Laboratory 2 , Washington, DC 20375,
Navaneetha K. Ravichandran
Department of Physics Boston College Chestnut Hill Massachusetts USA
Mohamed Zetati
Department of Materials Science & Engineering The University of Texas at Dallas Richardson Texas USA
Xinglu Wang
Rafik Addou
Department of Materials Science & Engineering The University of Texas at Dallas Richardson Texas USA
Robert M. Wallace
Department of Materials Science & Engineering The University of Texas at Dallas Richardson Texas USA
Songrui Hou
Corporate Research Taiwan Semiconductor Manufacturing Company Ltd San Jose California USA
Sam Vaziri
Corporate Research Taiwan Semiconductor Manufacturing Company Ltd San Jose California USA
Xinyu Bao
Taiwan Semiconductor Manufacturing Company 2 , Hsinchu 308001,
David Broido
Department of Physics Boston College Chestnut Hill Massachusetts USA
Gang Chen
Bing Lv
Department of Physics, The University of Texas at Dallas