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Nodal Burden and Oncologic Outcomes in Patients With Residual Isolated Tumor Cells After Neoadjuvant Chemotherapy (ypN0i+): The OPBC-05/ICARO Study
PURPOSE The nodal burden of patients with residual isolated tumor cells (ITCs) in the sentinel lymph nodes (SLNs) after neoadjuvant chemotherapy (NAC) (ypN0i+) is unknown, and axillary management is not standardized. We investigated rates of additional positive lymph nodes (LNs) at axillary lymph node dissection (ALND) and oncologic outcomes in patients with ypN0i+ treated with and without ALND. METHODS The Oncoplastic Breast Consortium-05/ICARO cohort study (ClinicalTrials.gov identifier: NCT06464341 ) retrospectively analyzed data from patients with stage I to III breast cancer with ITCs in SLNs after NAC from 62 centers in 18 countries. The primary end point was the 3-year rate of any axillary recurrence. The rate of any invasive recurrence was the secondary end point. RESULTS In total, 583 patients were included, of whom 182 (31%) had completion ALND and 401 (69%) did not. The median age was 48 years. Most patients (74%) were clinically node-positive at diagnosis and 41% had hormone receptor–positive/human epidermal growth factor receptor 2–negative tumors. The mean number of SLNs with ITCs was 1.2. Patients treated with ALND were more likely to present with cN2/3 disease (17% v 7%, P < .001), have ITCs detected on frozen section (62% v 8%, P < .001), have lymphovascular invasion (38% v 24%, P < .001), and receive adjuvant chest wall (89% v 78%, P = .024) and nodal radiation (82% v 75%, P = .038). Additional positive nodes were found at ALND in 30% of patients, but only 5% had macrometastases. The 3-year rates of any axillary and any invasive recurrence were 2% (95% CI, 0.95 to 3.6) and 11% (95% CI, 8 to 14), respectively, with no statistical difference by type of axillary surgery. CONCLUSION The nodal burden in patients with ypN0(i+) was low, and axillary recurrence after ALND omission was rare in patients selected for this approach. These results do not support routine ALND in all patients with ypN0(i+).
Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications
Herein, we report a thick-AlN-barrier (TAB) based AlN/GaN RF HEMT with remarkable power performance at low voltage for sub-6G applications. Featuring a 7 nm AlN barrier layer and the regrown n+-GaN Ohmic contacts, the device shows low sheet and contact resistances, leading to 1.6-A/mm output current, 3-V knee voltage, and consequent 75% power-added efficiency (PAE) and 1.3-W/mm output power density (Pout) at 2.6 GHz and 6-V drain voltage (VDS). This PAE-Pout result represents the state-of-the-art levels of low-voltage power amplifiers (LV PAs) for sub-6G applications. Meanwhile, the TAB-HEMT is found to exhibit satisfactory linearity and noise performance as well. The OIP3 (output third-order intercept point) value of 35.3 dBm is obtained at 6-V VDS, thanks to the elaborately designed thick AlN barrier. A minimum noise figure (NFmin) as low as 0.32 dB at 2.6 GHz and VDS = 6 V is achieved thanks to the suppressed thermal noise enabled by low channel resistance. These results highlight the potential of the TAB-HEMT as an all-around and compact device platform for LV RF front-end-module applications.
A new approach to interference cancellation in D2D 5G uplink via Non orthogonal convex optimization
Current‐Driven Magnetization Switching for Superconducting Diode Memory
AbstractStacking superconductors (SC) with ferromagnetic materials (FM) significantly impact superconductivity, enabling the emergence of spin‐triplet states and topological superconductivity. The tuning of superconductivity in SC‐FM heterostructure is also reflected in the recently discovered superconducting diode effect, characterized by nonreciprocal electric transport when time and inversion symmetries are broken. Notably, in SC‐FM systems, a time reversal operation reverses both current and magnetization, leading to the conceptualization of superconducting magnetization diode effect (SMDE). In this variant, while the current direction remains fixed, the critical currents shall be different when reversing the magnetization. Here, the existence of SMDE in SC‐FM heterostructures is demonstrated. SMDE uniquely maps magnetization states onto superconductivity by setting the read current between two critical currents for the positive and negative magnetization directions, respectively. Thus, the magnetization states can be read by measuring the superconductivity, while the writing process is accomplished by manipulating magnetization states through current‐driven spin–orbit torque to switch the superconductivity. The proposed superconducting diode magnetoresistance in SC‐FM heterostructures with an ideally infinite on/off ratio resolves the limitations of tunneling magnetoresistance in the magnetic tunneling junctions, thereby contributing to the advancement of superconducting spintronics.
A perspective on diamond MEMS magnetic sensors
Microelectromechanical system (MEMS) technology has unlocked a wide range of applications in electronics, mobility-type devices, and medical and energy generation devices from sensors and actuators to switches. Diamond, in particular, stands out for its exceptional mechanical robustness and electronic performance in extreme conditions, offering sensitivity and reliability superior to other semiconductor materials for MEMS sensors. In this perspective, we review the principles of MEMS magnetic sensors, diamond for MEMS, thermal stability of diamond MEMS resonators, and diamond MEMS magnetic sensors, particularly for the applications under high temperatures. We present the interface engineering of diamond MEMS magnetic sensors to improve the thermal stability. Finally, we discuss the potential solutions, outline future research directions, and discuss the prospects for continued progress of diamond MEMS.
Optimization of covert spoofing parameters for loosely coupled GNSS/INS systems based on improved genetic algorithm
Reactive Plasma Deposition of ITO as an Efficient Buffer Layer for Inverted Perovskite Solar Cells
AbstractIn this study, the potential of reactive plasma deposition (RPD) is demonstrated for fabricating indium tin oxide (ITO) as an efficient buffer layer in inverted wide‐bandgap perovskite solar cells (PSCs). This method results in a certified efficiency of 21.33% for wide‐bandgap PSCs, demonstrating superior thermal stability and operational stability. The optimized devices achieve an impressive open‐circuit voltage (VOC) of 1.252 V with a bandgap of 1.67 eV, resulting in a remarkably low voltage deficit of 0.418 V, attributed to improved electron extraction, reduced interface defects, and suppressed surface recombination. The cells maintain over 90% of their initial efficiency after 1023 h of thermal aging at 88 °C. Furthermore, by integrating a highly efficient semi‐transparent PSC with a CIGS bottom cell, a four‐terminal tandem configuration is achieved with a total efficiency of 29.03%, representing one of the most efficient perovskite/CIGS tandem solar cells reported to date. This study provides valuable insights into the potential of RPD for improving the performance and scalability of inverted wide‐bandgap PSCs.
Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors
This paper presents a comprehensive study of silicon germanium (SiGe) cladded channels for stacked nanowires (NWs), focusing on morphological control and strain engineering to enhance device performance. High-resolution transmission electron microscopy (TEM) was used to characterize the Si NWs and SiGe cladding morphology. The results demonstrate that the morphology of SiGe cladding can be controlled by adjusting the high-temperature H2 baking conditions, leading to shapes such as triangular, circular, and hexagonal. Technology computer-aided design simulations and geometric phase analysis of TEM images revealed that the maximum compressive stress of SiGe cladding is 3 GPa, corresponding to a compressive strain of 2.48%, which significantly enhances hole mobility. Electrical performance tests and simulations on p-type metal–oxide–semiconductor field-effect transistor devices with different morphologies showed excellent short-channel effect control, with a subthreshold swing (SS) of approximately 70 mV/dec and a drain-induced barrier lowering of only 40 mV/V. These findings provide valuable guidelines for fabricating high-quality SiGe channels with controlled structures, enabling the realization of high carrier mobilities in future devices.
The bystander effect of pyroptosis
The autonomic response following taVNS predicts changes in level of consciousness in DoC patients
Abstract Advancements in emergency medicine and critical care have significantly improved survival rates for patients with severe acquired brain injuries(sABI), subsequently increasing the prevalence of disorders of consciousness (DoC) such as Unresponsive Wakefulness Syndrome (UWS) and Minimally Conscious State (MCS). However, the assessment of conscious states relies on the observation of behavioral responses, the interpretation of which may vary from evaluator to evaluator, as well as the high rate of misdiagnosis, which together pose significant challenges for clinical diagnosis. The study investigates the utility of transcutaneous auricular vagus nerve stimulation (taVNS) in modulating autonomic responses, as evidenced through heart rate variability (HRV), for distinguishing between healthy individuals and DoC patients and for prognosticating patient outcomes. A prospective randomized clinical trial was conducted from Februry 9, 2022, to February 4, 2024, at Hangzhou Armed Police Hospital in China. Healthy controls (HC) and DoC patients were enrolled in this study. The taVNS was administered to each subject for ten minutes. There electrocardiogram (ECG) signals were recorded for the analysis of HRV both during the stimulation and the ten minutes of rest that preceded and followed the stimulation. Subsequent investigations utilized Support Vector Machine (SVM) modeling, enhanced by a Radial Basis Function (RBF) kernel, to explore potential predictors of patient outcomes. This approach aimed to differentiate HC from DoC and MCS from UWS patients. 26 HC and 36 patients diagnosed with DoC were included in the analysis,. The DoC group consisted of 17 patients with a diagnosis of MCS and 19 with diagnosis of UWS/VS. Significant modulations in HRV parameters (HF, VLF, SampEn) were observed, indicating variations in autonomic response between the control group and DoC patients. Using the VLF, LF, and SampEn features in SVM model, DoC and HC were correctly classified with an accuracy of 86%. Similarly, MCS and UWS were classified with an accuracy of 78%. The SVM modeling achieved an 86% accuracy rate in predicting outcomes three months post-intervention, with a 71% confirmation rate at six months.The results highlight taVNS’s potential as a therapeutic modality in managing DoC by demonstrating its impact on autonomic regulation and suggesting pathways for enhancing recovery, which accentuates the significance of exploring brain-heart dynamics in DoC, presenting a novel approach to therapeutic strategies. Trial Registration Information: URL: chictr.org.cn; Unique identifier: ChiCTR2100045161. Date of the first registration: 9th/ April/ 2021.
2D Conjugated Metal–Organic Framework‐Based Composite Membranes for Nanofluidic Ionic Photoelectric Conversion
AbstractNanofluidic photoelectric conversion system based on photo‐excitable 2D materials can directly transduce light stimuli into an ion‐transport‐mediated electric signal, showing potential for mimicking the retina's function with a more favorable human–robot interactions. However, the current membranes suffer from low generation efficiency of charge carriers due to the mixed microstructure and limited charge transport ability caused by the large interlayer spacing and monotonous pathway. Here, a fully conjugated 2D hexaimino‐substituted triphenylene‐based metal–organic framework (2D‐HATP‐cMOF) based composite membrane with high conductivity for photoelectric conversion is presented. The extended π‐d conjugation within the ab plane and the favorable transport pathway through π–π stacking of the c‐MOF maximize the generation and transfer of charge carrier and greatly accelerate the ion transport. As a result, the 2D‐HATP‐cMOF‐based composite membrane possesses ultrafast photoelectric response, superior to other reported 2D systems like graphene oxide (GO), transition metal carbides, carbonitrides and nitrides (MXene), and MoS2, which require at least 10 s. A successful ion pump phenomenon, that is active transport from low concentration to high concentration as an important way of information transmission in organisms, is realized based on the efficient photoelectric conversion capability. This work demonstrates the great promise of 2D c‐MOF in ionic photoelectric conversion.
Lanmodulin‐Decorated Microbes for Efficient Lanthanide Recovery
Abstract Rare earth elements (REEs) are essential for many clean energy technologies. Yet, they are a limited resource currently obtained through carbon‐intensive mining. Here, bio‐scaffolded proteins serve as simple, effective materials for the recovery of REEs. Surface expression of the protein lanmodulin (LanM) on E. coli , followed by freeze‐drying of the microbes, yields a displayed protein material for REE recovery. Four REE cations (Y 3+ , La 3+ , Gd 3+ , and Tb 3+ ) are captured efficiently, with over 80% recovery even in the presence of competitive ions at one‐hundred‐fold excess. Moreover, these materials are readily integrated into a filter with high capture capacity (12 mg g −1 dry cell weight) for the selective isolation and recovery of REEs from complex matrices. Further, the proteins in the filter remain stable over ten bind‐and‐release cycles and a week of storage. To improve the deployability of this filter material, a simple colorimetric assay with the dye alizarin‐3‐methyliminodiacetic acid is incorporated. The assay can be performed in under 5 min, enabling rapid monitoring of REE recovery and filter efficiency. Overall, this low‐cost, robust material will enable environmentally friendly recycling and recovery of critical elements.
Negative differential resistance in a family of Fe3X4 (X <b>=</b> S, Se, Te) antiferromagnetic semiconducting nanowires
The experimentally observed 2D magnets have unlocked the possibility of realizing a stable long-range order in the low-dimensional limit, which also gives a boost to the family of 1D magnets. Recently, a family of Fe-based nanowires has been observed in high-throughput transition metal chalcogenides synthesized by chemical vapor deposition [Zhou et al., Nat. Mater. 22, 450–458 (2023)]. In this work, the atomic configuration, chemical composition, and magnetic properties of Fe3X4 (X = S, Se, Te) nanowires were confirmed by first-principles calculations and Monte Carlo simulations. Due to their intrinsic anisotropic character and strong d-p hybridization, Fe3X4 nanowires exhibit antiferromagnetic semiconducting behavior with good stability, a tunable bandgap of 0.277–0.771 eV, a large vertical magnetic anisotropy energy of 2.39 meV/Fe, and a high Néel temperature of 680–840 K. Moreover, the calculation of the spin transport properties has shown that these Fe3X4 nanowires possess the negative differential resistance behavior with the peak-to-valley current ratio from 1.84 to 6.85. Our results not only expand the database of magnetic nanowires but also provide a low-dimensional platform for multifunctional spin devices.
Secondary prevention with antiplatelet medications in patients with antiphospholipid antibody-related stroke
“Pumping” Trace Cu Impurity out of Zn Foil for Sustainable Aqueous Battery Interface
AbstractDendritic zinc (Zn) electrodeposition presents a significant obstacle to the large‐scale development of rechargeable zinc‐ion batteries. To mitigate this challenge, various interfacial strategies have been employed. However, these approaches often involve the incorporation of foreign materials onto Zn anode surface, resulting in increased material costs and processing complexities, not to mention the compromised interface endurability due to structural and compositional heterogeneity. Realizing that Cu atoms typically exist as trace impurities in commercial Zn, a novel approach is demonstrated that leverages these Cu impurities to create a Cu‐rich surface for effective modulation of Zn electrodeposition. By simply heating commercially available Zn foil with a naturally oxidized surface, not only the internal Cu atoms are thermally activated to become diffusible, their diffusion is also navigated toward the surface via oxygen attraction. The resulting Cu‐rich surface effectively regulates Zn electrodeposition, comparable to conventional interfacial strategies, yet exhibits superior cycling durability. 3D in situ microscopy confirms that this Cu‐rich surface enables dendrite‐free, compact, and (101)‐oriented Zn electrodeposition, contrasting with the traditional (002)‐oriented dendrite‐suppression mechanism. By transforming trace Cu impurity within Zn foil into a Cu‐rich surface, this work demonstrates a straightforward, cost‐effective and efficient method for controlling Zn electrodeposition.
Wide gap II-VI diodes with PbTe nano-inclusions for infrared detection and photovoltaics
We report on the fabrication and characterization of p–n diodes made from wide bandgap II-VI semiconductors (p-ZnTe/n-CdTe) containing nano-inclusions of narrow bandgap material (PbTe). The diodes are fabricated by molecular beam epitaxy on semi-insulating GaAs (100) substrates. The PbTe nano-inclusions are formed either as a single layer of PbTe with a thickness of 350 nm or as multilayers built from alternating thin layers of PbTe and CdTe. Comparison of cross-sectional scanning electron microscope images with electron beam-induced current measurements confirms that the PbTe nano-inclusions are located in depletion regions of the diodes. Despite the presence of the highly conductive, narrow bandgap PbTe semiconductor between the p- an n-type layers, the current–voltage (I–V) characteristics of the devices show rectifying behavior and acceptable diode parameters in the wide temperature range of 60–290 K. The p-ZnTe/n-CdTe diodes with PbTe nano-inclusions exhibit significant sensitivity to infrared radiation starting at the wavelength of about 1.5 μm and with a long-wavelength cutoff of 3.9 and 5.4 μm at 290 and 50 K, respectively. A peak sensitivity appears at a wavelength of 2.29 μm and reaches the maximum of almost 1 V/W at a temperature of 150 K. The temperature dependence of the cutoff wavelength clearly shows that the sensitivity to infrared radiation of the wide bandgap p-ZnTe/n-CdTe diodes is due to band-to-band optical excitations taking place in PbTe nano-inclusions. The results presented here prove that such diodes can be used for infrared sensing or for two-color infrared solar cells.
The performance evolution of Xue and Yamada-Ota models for local thermal non equilibrium effects on 3D radiative casson trihybrid nanofluid
Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in the laser performance have been bottlenecked by the limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers with an AlGaAs nanomembrane transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The uniform formation of this nanometer-thin ALD-Al2O3 interlayer and structural integrity of the grafted heterojunction are confirmed in STEM. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.